FA1A3Q ,Compound transistorFEATURES
. Resistors Built-in TYPE
R1
R2
R1=1.0k§2
R2=10k§2
E
O Complementary to F ..
FA1A3Q-T1B ,Compound transistorNEG
ELECTRON DEVICE
,a i.
DATA SHEET
SILICON TRANSISTOR
_jl!'Plr'lll/k?a
MEDIUM S ..
FA1A3Q-T2B ,Compound transistorELECTRICAL CHARACTERISTICS (Ta = 25 oC)
CHARACTERISTIC
SYMBOL
60 v
V 50 v
5 v
100 mA
2 ..
FA1A4M ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR MINI MOLDDATA SHEETSILICON TRANSISTORFA1A4MMEDIUM SPEED SWITCHINGRESISTOR BUILT-IN TYPE NPN TRANSISTORMINI ..
FA1A4M ,MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR MINI MOLDDATA SHEETSILICON TRANSISTORFA1A4MMEDIUM SPEED SWITCHINGRESISTOR BUILT-IN TYPE NPN TRANSISTORMINI ..
FA1A4M-L ,Compound transistorDATA SHEETSILICON TRANSISTORFA1A4MMEDIUM SPEED SWITCHINGRESISTOR BUILT-IN TYPE NPN TRANSISTORMINI ..
FDS9926A ,Dual N-Channel 2.5V Specified PowerTrench MOSFETGeneral DescriptionThese N-Channel 2.5V specified MOSFETs use • 6.5 A, 20 V. R = 0.030 Ω @ V = 4.5 ..
FDS9926A_NL ,Dual N-Channel 2.5V Specified PowerTrench MOSFETGeneral DescriptionThese N-Channel 2.5V specified MOSFETs use 6.5 A, 20 V. R = 30 mΩ @ V = 4.5 VDS( ..
FDS9926A_NL. ,Dual N-Channel 2.5V Specified PowerTrench MOSFETapplications with a wide range of gate drive voltage• Optimized for use in battery protection circu ..
FDS9926A_NL.. ,Dual N-Channel 2.5V Specified PowerTrench MOSFETApplications• Battery protection• Load switch• Power management5 4Q16 37 2Q28 1oAbsolute Maximum Ra ..
FDS9933 ,Dual P-Channel 2.5V Specified PowerTrench MOSFETApplications • Load switch • High performance trench technology for extremely low R DS(ON)• Motor ..
FDS9933_NL ,Dual P-Channel 2.5V Specified PowerTrench MOSFETFeatures This P-Channel MOSFET is a rugged gate version of • –5 A, –20 V, R = 55 mΩ @ V = –4.5 V DS ..
FA1A3Q-FA1A3Q-T1B-FA1A3Q-T2B
