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ESDA25DB3
TRANSIL ARRAY FOR ESD PROTECTION
ESDA25DB3August 2001 - Ed : 2 18 BIDIRECTIONAL TRANSIL FUNCTIONS LOW CAPACITANCE:C= 30pF@ VRM 500W peak pulse power (8/20 μs)
FEATURES
FUNCTIONAL DIAGRAMThe ESDA25DB3isa dual monolithic voltage
suppressor designedto protect components which
are connectedto data and transmission lines
against ESD.
DESCRIPTIONTRANSIL ARRAY
FOR ESD PROTECTION
Application Specific Discretes
A.S.D.™
Where transient overvoltage protectionin esd
sensitive equipmentis required, suchas: COMPUTERS PRINTERS COMMUNICATION SYSTEMSis particulary recommended for RS232 I/O port
protection where the line interface withstands2
kV, ESD surges.
APPLICATIONSHigh ESD protection level:upto25kV
High integration
Suitablefor high density boards
BENEFITSIEC 1000-4-2: level4
MIL STD 883C-Method 3015-6: class3
(human body model)
COMPLIES WITH THEFOLLOWING STANDARDS:
ESDA25DB3
ELECTRICAL CHARACTERISTICS (Tamb= 25°C)
ABSOLUTE MAXIMUM RATINGS (Tamb= 25°C)
note1:BetwennanyI/Opin Groung
note2:Squarepulse,Ipp= 25A, tp=2.5μs.
note3:Δ VBR=αT* (Tamb -25°C)* VBR (25°C)
ESDA25DB3The ESDA family has been designedto clamp fast
spikes like ESD. Generally the PCB designers
needto calculate easily the clamping voltage VCL.
Thisis why we give the dynamic resistancein
additionto the classical parameters. The voltage
across the protection cell can be calculated with
the following formula:
VCL =VBR +RdIPP
Where Ippis thepeak current throughthe ESDA cell.
DYNAMIC RESISTANCE MEASUREMENTThe short durationof the ESD has ledusto prefer more adapted test wave,as below defined,to the
classical 8/20μs and 10/1000μs surges.
2.5μs duration measurement wave. the valueof the dynamic resistance remains
stable fora surge duration lower than 20μs, the
2.5μs rectangular surge is well adapted. In
addition both rise and fall times are optimizedto
avoid any parasitic phenomenon during the
measurementof Rd.
CALCULATION OF THE CLAMPING VOLTAGE
USE OF THE DYNAMIC RESISTANCE
ESDA25DB3 25 50 75 100 125 1500.0
Ppp[Tj initial]/Ppp[Tj initial=25°C]
Fig.1: Peak power dissipation versus initial
junction tempearature. 25 30 35 40 45 50 55 600.1
Ipp(A)
Fig. 3: Clamping voltage versus peak pulse
current(Tj initial=25 °C).
Rectangular waveformtp= 2.5 μs.
110 100100
Ppp(W)
Fig. 2: Peak pulse power versus exponential
pulse duration(Tj initial=25 °C). 5 10 3010
C(pF)
Fig.4: Capacitance versus reverse applied
voltage (typical values). 50 75 100 1251
200 [Tj]/I [Tj=25°C]RR
Fig.5: Relative variationof leakage current versus
junction temperature (typical values).
ESDA25DB3
PACKAGE MECHANICAL DATASO-20 Plastic
Marking: Logo, Date Code, E25DB3
Packaging: Preferred packagingis tape and reel.
Weight: 0.55g.
Information furnishedisbelieved tobeaccurateand reliable.However, STMicroelectronics assumesnoresponsibility fortheconsequencesof
useofsuch informationnorforany infringementofpatentsor otherrightsof third parties which mayresultfromits use.No licenseis grantedby
implicationor otherwise underany patentor patent rightsof STMicroelectronics. Specifications mentionedinthis publicationare subjectto
change without notice. This publication supersedes and replacesall information previously supplied.
STMicroelectronics productsarenot authorizedfor useas critical componentsinlife support devicesor systems without express writtenap-
provalof STMicroelectronics.
TheST logoisa registered trademarkof STMicroelectronics 2001 STMicroelectronics- Printedin Italy-All rights reserved.
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