ESAC83M-006 ,SCHOTTKY BARRIER DIODEFeatures
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Insulated package by fully molding,
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Low Vr,
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ESAC83M-006 ,SCHOTTKY BARRIER DIODEApplications
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High speed power swnchmg.
M9rr.,'s-stit 2 Outline Drawings
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ESAC85-009 ,SCHOTTKY BARRIER DIODEApplications
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M9rffv'-vtit 2 Outline Drawings
10’35 c-'-'-""- 45t0?
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ESAC85-009 ,SCHOTTKY BARRIER DIODEFeatures
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Low (
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Super high speed switching.
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ESAC85-009 ,SCHOTTKY BARRIER DIODEA-435
ESAC85-009(10A)
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SCHOTTKY BARRIER DIODE
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ESAC85M-009 ,SCHOTTKY BARRIER DIODEFeatures
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Insulated package by fully molding.
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Low VF
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FA5331M ,Bipolar IC for power factor correctionFeatures8110.06• Drive circuit for connecting a power MOS-FET(Io = – 1.5A)• Pulse-by-pulse overcurr ..
FA5331M ,Bipolar IC for power factor correctionBlock diagram1819.41.50.817.6– 0.25 – 0.12.54 0.5FA5332P9161819.21.30.71Pin Pin DescriptionNo. symb ..
FA5331M ,Bipolar IC for power factor correction0~15˚0~15˚Bipolar ICFA5331P(M)/FA5332P(M)FA5331P(M)/FA5332P(M)For Power Factor Correctionn Descript ..
FA5331P ,Bipolar IC For Power Factor CorrectionFeatures8110.06• Drive circuit for connecting a power MOS-FET(Io = – 1.5A)• Pulse-by-pulse overcurr ..
FA5332M ,Bipolar IC for power factor correctionFeatures8110.06• Drive circuit for connecting a power MOS-FET(Io = – 1.5A)• Pulse-by-pulse overcurr ..
FA5332P ,Bipolar IC for switching power supply controlFeatures8110.06• Drive circuit for connecting a power MOS-FET(Io = – 1.5A)• Pulse-by-pulse overcurr ..
ESAC83M-006
