ESAC82M-004 ,SCHOTTKY BARRIER DIODEFeatures
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Insulated package by fully molding,
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Low VP
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ESAC82M-006 ,SCHOTTKY BARRIER DIODEApplications
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High speed power switching, - -
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ESAC83-004 ,SCHOTTKY BARRIER DIODEApplications
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M9r)ffptit : Outline Drawings
1.51“ I
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ESAC83M-004 ,SCHOTTKY BARRIER DIODE(40V / 20A )ESAC83M-004 (20A) Outline drawings, mmSCHOTTKY BARRIER DIODE– 0.35.5– 0.3– 0.21 ..
ESAC83M-006 ,SCHOTTKY BARRIER DIODEFeatures
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Insulated package by fully molding,
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Low Vr,
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ESAC83M-006 ,SCHOTTKY BARRIER DIODEApplications
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High speed power swnchmg.
M9rr.,'s-stit 2 Outline Drawings
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FA5317P ,Bipolar IC For Switching Power Supply ControlBlock diagramÁ FA5310BP(S)/FA5311BP(S)/FA5316P(S)/FA5317P(S)Pin Pin DescriptionNo. symbol1 RT Oscil ..
FA5331M ,Bipolar IC for power factor correctionFeatures8110.06• Drive circuit for connecting a power MOS-FET(Io = – 1.5A)• Pulse-by-pulse overcurr ..
FA5331M ,Bipolar IC for power factor correctionBlock diagram1819.41.50.817.6– 0.25 – 0.12.54 0.5FA5332P9161819.21.30.71Pin Pin DescriptionNo. symb ..
FA5331M ,Bipolar IC for power factor correction0~15˚0~15˚Bipolar ICFA5331P(M)/FA5332P(M)FA5331P(M)/FA5332P(M)For Power Factor Correctionn Descript ..
FA5331P ,Bipolar IC For Power Factor CorrectionFeatures8110.06• Drive circuit for connecting a power MOS-FET(Io = – 1.5A)• Pulse-by-pulse overcurr ..
FA5332M ,Bipolar IC for power factor correctionFeatures8110.06• Drive circuit for connecting a power MOS-FET(Io = – 1.5A)• Pulse-by-pulse overcurr ..
ESAC82M-004
