ESAC63M-004 ,SCHOTTKY BARRIER DIODEFeatures
. W)ifttMdrHtt" ttr.ive--J_
Insulated package by fully molding.
. (EV,
Low Vr,
o A4yr ..
ESAC63M-004 ,SCHOTTKY BARRIER DIODEApplications co ©
q 3$MXthAtyr.vy
High speed power switching.
.g"t'tiie4ti* S Maximum Rating ..
ESAC82-004 ,SCHOTTKY BARRIER DIODEApplications
o3tiAfyrsry
High speed power switching.
'ittdyNtth $ruf:8---+
'lHHf9-rtit: Out ..
ESAC82M-004 ,SCHOTTKY BARRIER DIODEFeatures
oBt0fytiiiioutteftt.:--miy
Insulated package by fully molding,
. tlblf
Low VP
. x ..
ESAC82M-006 ,SCHOTTKY BARRIER DIODEApplications
. 1rMNttxt.rr.vy
High speed power switching, - -
Ws"t'tieti* 1 Maximum Ratings and ..
ESAC83-004 ,SCHOTTKY BARRIER DIODEApplications
"Mqttrxtyr>f
TtiHcPN-ktt3ruf:;r-h'
M9r)ffptit : Outline Drawings
1.51“ I
..
FA5316P ,Bipolar IC For Switching Power Supply ControlBlock diagramÁ FA5310BP(S)/FA5311BP(S)/FA5316P(S)/FA5317P(S)Pin Pin DescriptionNo. symbol1 RT Oscil ..
FA5317P ,Bipolar IC For Switching Power Supply ControlBlock diagramÁ FA5310BP(S)/FA5311BP(S)/FA5316P(S)/FA5317P(S)Pin Pin DescriptionNo. symbol1 RT Oscil ..
FA5331M ,Bipolar IC for power factor correctionFeatures8110.06• Drive circuit for connecting a power MOS-FET(Io = – 1.5A)• Pulse-by-pulse overcurr ..
FA5331M ,Bipolar IC for power factor correctionBlock diagram1819.41.50.817.6– 0.25 – 0.12.54 0.5FA5332P9161819.21.30.71Pin Pin DescriptionNo. symb ..
FA5331M ,Bipolar IC for power factor correction0~15˚0~15˚Bipolar ICFA5331P(M)/FA5332P(M)FA5331P(M)/FA5332P(M)For Power Factor Correctionn Descript ..
FA5331P ,Bipolar IC For Power Factor CorrectionFeatures8110.06• Drive circuit for connecting a power MOS-FET(Io = – 1.5A)• Pulse-by-pulse overcurr ..
ESAC63M-004