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ESAC25M-04N ,FUJI SILICON DIODE SPECIFICATION
ESAC25N ,FAST RECOVERY DIODEFeatures
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High voltage by mesa design.
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High reliability
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ESAC63-004 ,SCHOTTKY BARRIER DIODEFeatures
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Low V;
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Super high speed switching.
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ESAC63-004 ,SCHOTTKY BARRIER DIODEApplications
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M9rr.f-stit 2 Outline Drawings
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ESAC63M-004 ,SCHOTTKY BARRIER DIODEFeatures
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Insulated package by fully molding.
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Low Vr,
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ESAC63M-004 ,SCHOTTKY BARRIER DIODEApplications co ©
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High speed power switching.
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FA5316P ,Bipolar IC For Switching Power Supply ControlBlock diagramÁ FA5310BP(S)/FA5311BP(S)/FA5316P(S)/FA5317P(S)Pin Pin DescriptionNo. symbol1 RT Oscil ..
FA5317P ,Bipolar IC For Switching Power Supply ControlBlock diagramÁ FA5310BP(S)/FA5311BP(S)/FA5316P(S)/FA5317P(S)Pin Pin DescriptionNo. symbol1 RT Oscil ..
FA5331M ,Bipolar IC for power factor correctionFeatures8110.06• Drive circuit for connecting a power MOS-FET(Io = – 1.5A)• Pulse-by-pulse overcurr ..
FA5331M ,Bipolar IC for power factor correctionBlock diagram1819.41.50.817.6– 0.25 – 0.12.54 0.5FA5332P9161819.21.30.71Pin Pin DescriptionNo. symb ..
FA5331M ,Bipolar IC for power factor correction0~15˚0~15˚Bipolar ICFA5331P(M)/FA5332P(M)FA5331P(M)/FA5332P(M)For Power Factor Correctionn Descript ..
FA5331P ,Bipolar IC For Power Factor CorrectionFeatures8110.06• Drive circuit for connecting a power MOS-FET(Io = – 1.5A)• Pulse-by-pulse overcurr ..
ESAC25M-02N-ESAC25M-04N