ES1F ,1.0A Ultra Fast Recovery Rectifierapplications. • Glass passivated junction. • Low profile package.• Easy pick and place.• Built-in s ..
ES1H ,1.0A Ultra Fast Recovery Rectifierapplications. • Glass passivated junction. • Low profile package.• Easy pick and place.• Built-in s ..
ES1J ,1.0A Ultra Fast Recovery RectifierFeatures• For surface mount
ES3J ,3.0 UltraFast Recovery RectifierES3A - ES3J — Fast RectifiersApril 2012ES3A - ES3JFast Rectifiers
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F930J106MAA , SOLID TANTALUM ELECTROLYTIC CAPACITORS
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F930J226MAA , SOLID TANTALUM ELECTROLYTIC CAPACITORS
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ES1F
1.0A Ultra Fast Recovery Rectifier
ES1F - ES1J Fast Rectifiers July 2007 ES1F - ES1J Fast Rectifiers Features • For surface mount applications. • Glass passivated junction. • Low profile package. • Easy pick and place. • Built-in strain relief. • Superfast recovery times for high efficiency. SMA(DO-214AC) Color Band Denotes Cathode Absolute Maximum Ratings * T = 25°C unless otherwise noted a Value Symbol Parameter Units ES1F ES1G ES1H ES1J V Maximum Repetitive Reverse Voltage 300 400 500 600 V RRM I Average Rectified Forward Current 1.0 A F(AV) Non-repetitive Peak Forward Surge Current I 30 A FSM 8.3 ms Single Half-Sine-Wave (JEDEC method) T Junction Temperature 150 °C J T Storage Temperature Range -55 to 150 °C STG P Power Dissipation 1.47 W D * These ratings are limiting values above which the serviceability of any semiconductor device may by impaired. Thermal Characteristics Symbol Parameter Value Units R Thermal Resistance, Junction to Ambient * 85 °C/W θJA R Thermal Resistance, Junction to Lead * 35 °C/W θJL * P. C. B mounted on 0.2’’ x 0.2’’( 5 x 5 mm) copper Pad Area. Electrical Characteristics T = 25°C unless otherwise noted C Symbol Parameter Value Units V Maximum Forward Voltage @ I = 1.0 A 1.3 1.7 V F F Maximum Reverse Recovery Time T 35 ns rr IF = 0.5 A, IR = 1.0 A, IRR = 0.25 A Maximum Reverse Current @ rated VR TA = 25°C 5.0 I uA R TA = 100°C 100 Typical Junction Capacitance C 10.0 8.0 pF j VR = 4.0 V, f = 1.0 MHz ©2007 1 ES1F - ES1J Rev. A
