EMZ1DXV6T1 ,Dual General Purpose TransistorsELECTRICAL CHARACTERISTICS (T = 25°C)ACharacteristic Symbol Min Typ Max UnitQ1: PNPCollector−Base B ..
ENE361D-07A ,Z-TRAP ENE seriesEN E series _ Surge Absorbers
Z-TRAP ENE series Nominal varistor voltage 200 to 470V
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ES3J ,3.0 UltraFast Recovery RectifierES3A - ES3J — Fast RectifiersApril 2012ES3A - ES3JFast Rectifiers
ESAB82-004 ,SCHOTTKY BARRIER DIODEFeatures
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Low VF
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Super high speed switching.
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ESAB82-004 ,SCHOTTKY BARRIER DIODEApplications
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M9Ufv'-stit 2 Outline Drawings
10";5 D 333.6302 1.5:”
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ESAB82M-006 ,SCHOTTKY BARRIER DIODEApplications
035$1E7Jx4~y+77
High speed power swnching.
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M9Hfrrtit 2 Outl ..
ESAB85M-009 ,SCHOTTKY BARRIER DIODEApplications
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High speed power switching.
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ESAB85M-009 ,SCHOTTKY BARRIER DIODEFeatures
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Insulated package by fully molding.
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Low v,
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EMZ1DXV6T1
Dual General Purpose Transistors
EMZ1DXV6T1,
EMZ1DXV6T5
Product Preview
Dual General Purpose
Transistors
NPN/PNP Dual (Complimentary)This transistor is designed for general purpose amplifier
applications. It is housed in the SOT−563 which is designed for low
power surface mount applications. Lead−Free Solder Plating Low VCE(SAT), �0.5 V
MAXIMUM RATINGS
THERMAL CHARACTERISTICS FR−4 @ Minimum Pad.
