EMX1DXV6T1 ,Dual NPN General Purpose Amplier TransistorELECTRICAL CHARACTERISTICS (T = 25°C)ACharacteristic Symbol Min Typ Max UnitCollector-Base Breakdow ..
EMX2DXV6T5 ,Dual NPN General Purpose TransistorsELECTRICAL CHARACTERISTICS (T = 25°C)ACharacteristic Symbol Min Typ Max UnitCollector-Base Breakdow ..
EMZ1 ,SOT-563 Plastic-Encapsulate Biploar TransistorsTHERMAL CHARACTERISTICSCASE 463APLASTICCharacteristic(One Junction Heated)Symbol Max UnitMARKING DI ..
EMZ1DXV6T1 ,Dual General Purpose TransistorsELECTRICAL CHARACTERISTICS (T = 25°C)ACharacteristic Symbol Min Typ Max UnitQ1: PNPCollector−Base B ..
ENE361D-07A ,Z-TRAP ENE seriesEN E series _ Surge Absorbers
Z-TRAP ENE series Nominal varistor voltage 200 to 470V
I
ES3J ,3.0 UltraFast Recovery RectifierES3A - ES3J — Fast RectifiersApril 2012ES3A - ES3JFast Rectifiers
ESAB82-004 ,SCHOTTKY BARRIER DIODEFeatures
. {EVE
Low VF
o AtyryryAe-Furriix
Super high speed switching.
o 'v-f-ttwr-latte ..
ESAB82-004 ,SCHOTTKY BARRIER DIODEApplications
o3$MtetAtyr,sry
M9Ufv'-stit 2 Outline Drawings
10";5 D 333.6302 1.5:”
I -f--l ..
ESAB82M-006 ,SCHOTTKY BARRIER DIODEApplications
035$1E7Jx4~y+77
High speed power swnching.
'rd:YNitt3r'.f8-t'
M9Hfrrtit 2 Outl ..
ESAB85M-009 ,SCHOTTKY BARRIER DIODEApplications
o3rMRthAtyr.vry
High speed power switching.
tirdyNttteuf:r-. F
ll"')?.,'-" I O ..
ESAB85M-009 ,SCHOTTKY BARRIER DIODEFeatures
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Insulated package by fully molding.
. {EVE
Low v,
o xtyr.v ..
EMX1DXV6T1
Dual NPN General Purpose Amplier Transistor
EMX1DXV6T1,
EMX1DXV6T5
Dual NPN General Purpose
Amplifier Transistor
This NPN transistor is designed for general purpose amplifier
applications. This device is housed in the SOT-563 package which is
designed for low power surface mount applications, where board
space is at a premium.
Features Reduces Board Space High hFE, 210−460 (Typical) Low VCE(sat), < 0.5 V These are Pb−Free Devices
MAXIMUM RATINGS (TA = 25°C)
THERMAL CHARACTERISTICSMaximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected. FR−4 @ Minimum Pad
