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EMIF02-600FU7
10-BIT WIDE EMI FILTER INCUDING ESD PROTECTION
EMIF02-600FU7
September 1998- Ed:2A
IEC 1000-4-2 15kV (air discharge)kV (contact discharge)
COMPLIESWITHTHEFOLLOWINGSTANDARDS:
SSOP24
FUNCTIONAL DIAGRAM
10-bit EMI bi-directionallow-pass-filter
Enhanced ESD protectionfor theprotected device,op-
timizedbythe four point structure
High flexibility inthe designof highdensity boards
BENEFITS
10-BIT WIDE EMI FILTER
INCUDING ESD PROTECTION
Application Specific Discretes
A.S.D.TM
Where EMI filtering inESDsensitive equipmentis required:
Computersand printers
Communication systems
Mobile phones
MCU Boards
MAIN APPLICATIONS
TheEMIF02-600FU7isa highly integrated array designed suppress EMI/ RFI noiseinall systems subjectedto
electromagnetic interferences.
Additionally, this filter includesan ESD protection circuitry
which preventsthe protected devicefrom destructionwhen
subjected to ESD surges up to 15 kV. The
EMIF02-600FU7 provides best efficiency when using
separated inputs and outputs,in the so-called 4-points
structure.
DESCRIPTION: ASDis trademarkof STMicroelectronics.
ESDresponsetoIEC1000-4-2 (15kVairdischarge) Filtering response(with 50Ω line)
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Symbol Parameterand test conditions Value Unit
VPP ESD discharge IEC1000-4-2,air discharge
ESD discharge IEC1000-4-2,contact discharge Junctiontemperature 150 °C
Top Operatingtemperaturerange -40to+85 °C
Tstg Storagetemperaturerange -55to +150 °C Lead solder temperature(10 secondduration) 260 °C
ABSOLUTE MAXIMUM RATINGS (Tamb =25 °C)
Symbol Test conditions Min. Typ. Max. Unit
VBR IR =1 mA 6 7 8 V
IRM VRM =3V 1 μA
RI/O Serialresistance betweenInput and Output 480 600 720 Ω Ipp =10 A,tp= 2.5μs (see note1) 0.55 Ω
Note1 :tocalculatethe ESD residualvoltage, please referto theparagraph ”ESDPROTECTION”on pages4&5
Symbol Parameter
VBR Breakdownvoltage
IRM Leakage current@ VRM
VRM Stand-offvoltage
VCL Clamping voltage Dynamicimpedance
IPP Peak pulsecurrent
RI/O Serial resistancebetween Input
and Output
ELECTRICALCHARACTERISTICS (Tamb =25°C)
2.5 3.0 3.5 4.0 4.5 5.0 5.50.5
20.0 IR[VR]/ IR[VR=3V](V)
Fig.1: Relativevariationof leakage current versus
reverse voltage(Typical values)
EMIF02-600FU7
2/9
TECHNICAL INFORMATION
FREQUENCY BEHAVIOR
The EMIF02-600FU7is firstly designedasan EMI/RFI filter. This low-pass filteris characterizedby the following
parameters: Cut-off frequency Insertion loss High frequency rejection
Figure A1gives these parameters,in particularthe signal rejectionatthe GSM frequencyis about -20dBmat 900MHz,
whilethe attenuationfor FM broadcast range (around 100MHz)is better than-32dBm
FigA1: EMIF02-600FU7frequencyresponse curve.
FigA2: Measurement conditions OUTPUT RF INPUT
EMIF02
TEST BOARD
EMIF02
SPECTRUM
ANALYSER VoutVin
50Ω
50Ω
EMIF02-600FU7
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ESD PROTECTION additiontoits filtering function, the EMIF02-600FU7is particularly optimizedto performESD protection.
ESD protectionis basedon voltage clamping whichcan becalculatedby:
VCL =VBR +Rd.IPP
This protection functionis splittedin2 stages.As shown infigure A3,the ESD strikes areclampedbythe first stage S1and
thenits remainingovervoltageis appliedtothe secondstagethroughthe resistorR. Sucha configuration makesthe output
voltage Vout very low. havea good approximationof the remaining voltagesat both Vin and Vout stages,we provide the typical dynamical
resistance value Rd.By taking into account these following hypothesis: R>>Rd, RG>>Rd and Rload>>Rd,it gives these
formulas:
Vin= Rg.Vbr+Rd.Vg
Vout= R.Vbr+Rd.Vin
The resultsof the calculation donefor VG=8kV, RG=330Ω (IEC1000-4-2 standard) and VBR=7V (typ.) give:
Vin= 20.33V
Vout= 7.01V
This confirms the very low remaining voltage across the devicetobe protected.Itis also importantto note thatin this
approximation theparasitic inductance effect wasnot taken into account. This couldbe few tenthsof volts during fewnsat
the Vin side.This parasitic effectis notpresentatthe Vout side duethe low current involved afterthe resistanceR.
The measurements shown here after illustrate very clearly (Fig.A5a) the highefficiencyofthe ESDprotection:no influenceofthe parasitic inductanceson Vout stage Vout clampingvoltage very closeto VBR
FigA3: ESD clamping behavior
ESD
Surge Vin Vout Rload S2 R Rd
VbrVbr
Devicetobe protectedEMIF02-600FU7
FigA4: Measurement conditions
GND
LOW-PASS FILTER
Vin Vout
GND GND
EMIF02-600FU7
4/9
Please note thatthe EMIF02-600FU7is not only actingfor positive ESD surgesbut alsofor negative ones. For these kind disturbancesit clamps closeto ground voltageas shownin Fig. A5b.
NOTE: DYNAMIC RESISTANCE MEASUREMENTthe valueofthe dynamic resistance remains stablefora
surge durationlower than 20μs,the 2.5μs rectangularsurge well adapted.In addition both rise and fall times are
optimizedto avoid any parasitic phenomenon during the
measurementof Rd.
CROSSTALK BEHAVIOR Crosstalkphenomena
The crosstalk phenomena are duetothe coupling between2 lines. The coupling factor( β12or β21) increases whenthe
gap across linesdecreases, particularlyin silicon dice.Inthe exampleabovethe expectedsignalon load RL2is α2VG2,in
fact the real voltageat this point hasgotan extra value β21VG1. This partof the VG1 signal represents the effectof the
crosstalk phenomenonof the line1onthe line2. This phenomenon hastobe taken into account whenthe drivers impose
fast digital dataor high frequency analog signalsin the disturbing line. The perturbed line willbe more affectedifit works
with low voltage signalor high load impedance (few kΩ). The following chapters give the valueof both digital and analog
crosstalk.
Fig A5: Remaining voltageat both stagesS1 (Vin) and S2 (Vout) during ESD surge Positivesurge b) Negativesurge
Fig A6: Rd measurement current wave
2.5μs
2μst
IPP
2.5μs durationmeasurementwave
FigA7: Crosstalk phenomena
line1
line2 β β
VG1
VG2
RG1
RG2
RL1
RL2
DRIVERS RECEIVERS
VG1 VG2
VG2 VG1
EMIF02-600FU7
5/9
DigitalCrosstalkFigure A8showsthe measurement circuit usedto quantifythe crosstalkeffectina classical digital application.
FigureA9 shows thatin sucha condition signal from0to5V and rise time of10ns,the impactonthe disturbed lineis less
than 20mV peakto peak.No data disturbance was notedonthe concerned line. The same results were obtained with falling
edges. AnalogCrosstalk
Figure A10 gives the measurement circuitforthe analog application.In figure A11, the curve showsthe effectof cell 1/24 cell 2/23,no difference was found with other couplesof adjacentcells.In usual frequency rangeof analog signals(upto
100MHz) the effecton disturbed lineis lessthan -32 dBm.
FigA8: Digital crosstalkmeasurement
Line1
Line2
VG1
β21VG1
+5V +5V
74HC04 74HC04
+5VSquare
Pulse
Generator
5KHz
FigA9: Digital crosstalkresults
Fig A10: Analogcrosstalk measurement
TGOUTPUT RFINPUT
EMIF02
TEST BOARD
Fig A11: Typical analogcrosstalk result 10 100-80
-10 dB
F(MHz)
EMIF02-600FU7
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Partno	Mfg	Dc	Qty	Available	Descript
EMIF02-600FU7 \|EMIF02600FU7	ST	N/a	11082	avai	10-BIT WIDE EMI FILTER INCUDING ESD PROTECTION