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EMH2412SANYON/a30000avaiN-Channel Power MOSFET, 24V, 6A, 27mOhm, Dual EMH8


EMH2412 ,N-Channel Power MOSFET, 24V, 6A, 27mOhm, Dual EMH8Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage V 24 VDSSGate-to-Sou ..
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EMH2412
N-Channel Power MOSFET, 24V, 6A, 27mOhm, Dual EMH8
Features • Low ON-resistance• Best suited for LiB charging and discharging switch • Common-drain type • 2.5V drive• Halogen free compliance• Protection diode in
Specifi cations
Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS 24 V
Gate-to-Source Voltage VGSS ±12 V
Drain Current (DC) ID 6A
Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 60 A
Allowable Power Dissipation PD When mounted on ceramic substrate (900mm2 ×0.8mm) 1unit 1.3 W
Total Dissipation PT When mounted on ceramic substrate (900mm2 ×0.8mm) 1.4 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Package Dimensions

unit : mm (typ)
EMH2412
N-Channel Silicon MOSFET General-Purpose Switching Device
Applications

876 5
123 4
Product & Package Information

• Package : EMH8
• JEITA, JEDEC : -
• Minimum Packing Quantity : 3,000 pcs./reel
Taping Type : TL Marking
Electrical Connection

LOT No.
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