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EGP30DGSN/a4200avaiFast Rectifiers (Glass Passivated)


EGP30D ,Fast Rectifiers (Glass Passivated)Features• Glass passivated cavity-free junction.• High surge current capability.• Low leakage curre ..
EGP30F ,Fast Rectifiers (Glass Passivated)Features• Glass passivated cavity-free junction.• High surge current capability.• Low leakage curre ..
EGP30G ,Fast Rectifiers (Glass Passivated)Features• Glass passivated cavity-free junction.• High surge current capability.• Low leakage curre ..
EGP30J ,Fast Rectifiers (Glass Passivated)Features• Glass passivated cavity-free junction.• High surge current capability.• Low leakage curre ..
EGP50B ,GLASS PASSIVATED FAST EFFICIENT RECTIFIERFeatures Plastic package has Underwriters Laboratories Flammability Classification 94V-01.0 (25.4) ..
EGP50C ,GLASS PASSIVATED FAST EFFICIENT RECTIFIER24-Apr-03 1Patented*EGP50A thru EGP50GVishay Semiconductorsformerly General SemiconductorRatings an ..


EGP30D
Fast Rectifiers (Glass Passivated)
EGP30A-EGP30K EGP30A - EGP30K Features • Glass passivated cavity-free junction. • High surge current capability. • Low leakage current. • Superfast recovery time for high efficiency. DO-201AD • Low forward voltage, high current COLOR BAND DENOTES CATHODE capability. Fast Rectifiers (Glass Passivated) Absolute Maximum Ratings* T = 25°C unless otherwise noted A Value Symbol Parameter Units 30A 30B 30C 30D 30F 30G 30J 320 V Breakdown Voltage 50 100 150 200 300 400 600 800 V R I Average Rectified Forward Current, F(AV) 3.0 A .375 " lead length @ T = 55°C A I Non-repetitive Peak Forward Surge Current FSM 125 A 8.3 ms Single Half-Sine-Wave Storage Temperature Range -65 to +150 T °C stg T Operating Junction Temperature -65 to +150 °C J *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics Symbol Parameter Value Units P Power Dissipation 6.25 W D Thermal Resistance, Junction to Ambient 20 R °C/W θJA Thermal Resistance, Junction to Lead 8.5 R °C/W JL θ Electrical Characteristics T = 25°C unless otherwise noted A Device Symbol Parameter Units 30A 30B 30C 30D 30F 30G 30J 320 V Forward Voltage @ 3.0 A 0.95 1.25 1.7 V F t Reverse Recovery Time 50 rr 75 ns = 0.5 A, I = 1.0 A, I = 0.25 A I F R rr I 5.0 A R Reverse Current @ rated V T = 25°C μ R A 100 μA T = 125°C A C Total Capacitance T 95 75 pF V = 4.0 V, f = 1.0 MHz R 2001 EGP30A - EGP30K, Rev. C
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