EGP10B ,Fast Rectifiers (Glass Passivated)Features• Superfast recovery time for highefficiency.• Low forward voltage, high current capabil ..
EGP10C ,Fast Rectifiers (Glass Passivated)18-Mar-02 1Patented*EGP10A thru EGP10GVishay Semiconductorsformerly General SemiconductorRatings an ..
EGP10D ,Fast Rectifiers (Glass Passivated)Features1.0 (25.4) Plastic package has Underwriters Laboratories MIN.Flammability Classification ..
EGP10G ,Fast Rectifiers (Glass Passivated)Features• Superfast recovery time for highefficiency.• Low forward voltage, high current capabil ..
EGP10G ,Fast Rectifiers (Glass Passivated)Features• Superfast recovery time for highefficiency.• Low forward voltage, high current capabil ..
EGP10G ,Fast Rectifiers (Glass Passivated)EGP10A-EGP10KEGP10A - EGP10K
EGP10B
Fast Rectifiers (Glass Passivated)
EGP10A-EGP10K EGP10A - EGP10K Features • Superfast recovery time for high efficiency. • Low forward voltage, high current capability. • Low leakage current. DO-41 COLOR BAND DENOTES CATHODE • High surge current capability. Fast Rectifiers (Glass Passivated) Absolute Maximum Ratings* T = 25°C unless otherwise noted A Value Symbol Parameter Units 10A 10B 10C 10D 10F 10G 10J 10K V Maximum Repetitive Reverse Voltage 50 100 150 200 300 400 600 800 V RRM I Average Rectified Forward Current, F(AV) 1.0 A .375 " lead length @ T = 55°C L I Non-repetitive Peak Forward Surge Current FSM 30 A 8.3 ms Single Half-Sine-Wave Storage Temperature Range -65 to +150 C T ° stg T Operating Junction Temperature -65 to +150 C J ° *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics Symbol Parameter Value Units P Power Dissipation 2.5 W D R Thermal Resistance, Junction to Ambient 50 C/W ° θJA Electrical Characteristics T = 25°C unless otherwise noted A Device Symbol Parameter Units 10A 10B 10C 10D 10F 10G 10J 10K V Forward Voltage @ 1.0 A 0.95 1.25 1.7 V F t Reverse Recovery Time 50 rr 75 ns I = 0.5 A, I = 1.0 A, I = 0.25 A F R rr I Reverse Current @ rated V T = 25 C 5.0 μA R ° R A 100 μA T = 125°C A C Total Capacitance T 22 15 pF V = 4.0 V, f = 1.0 MHz R 2001 EPG10A - EPG10K, Rev. C
