EGF1C ,Fast Rectifiers (Glass Passivated)Features• Low forward voltage drop.• Low profile package.• Fast switching for high efficiency.SMA/D ..
EGF1D ,Fast Rectifiers (Glass Passivated)Features• Low forward voltage drop.• Low profile package.• Fast switching for high efficiency.SMA/D ..
EGL34C ,Surface Mount Glass Passivated, Ultrafast Rectifier, Forward Current 0.5A03-Apr-03 1Patented*BYM07-50 thru BYM07-400, EGL34A thru EGL34GVishay Semiconductorsformerly Genera ..
EGL34D ,SURFACE MOUNT GLASS PASSIVATED JUNCTION FAST EFFICIENT RECTIFIER®BYM07-50 thru BYM07-400, EGL34A thru EGL34GVishay Semiconductorsformerly General SemiconductorSurf ..
EGL34D ,SURFACE MOUNT GLASS PASSIVATED JUNCTION FAST EFFICIENT RECTIFIER®BYM07-50 thru BYM07-400, EGL34A thru EGL34GVishay Semiconductorsformerly General SemiconductorSurf ..
EGL34G ,SURFACE MOUNT GLASS PASSIVATED JUNCTION FAST EFFICIENT RECTIFIERElectrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.Parameter ..
EGF1C
Fast Rectifiers (Glass Passivated)
EGF1A - EGF1D EGF1A - EGF1D Features • Low forward voltage drop. • Low profile package. • Fast switching for high efficiency. SMA/DO-214AC COLOR BAND DENOTES CATHODE Fast Rectifiers (Glass Passivated) Absolute Maximum Ratings* T = 25°C unless otherwise noted A Value Symbol Parameter Units 1A 1B 1C 1D V Maximum Repetitive Reverse Voltage 50 100 150 200 V RRM I Average Rectified Forward Current, @ T = 100°C 1.0 A F(AV) L I Non-repetitive Peak Forward Surge Current FSM 30 A 8.3 ms Single Half-Sine-Wave Storage Temperature Range -65 to +175 T °C stg T Operating Junction Temperature -65 to +175 °C J *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics Symbol Parameter Value Units P Power Dissipation 2.0 W D Thermal Resistance, Junction to Ambient* 85 R °C/W θJA Thermal Resistance, Junction to Lead* 30 R °C/W θJL *Device mounted on FR-4 PCB 0.013 mm. Electrical Characteristics T = 25°C unless otherwise noted A Device Symbol Parameter Units 1A 1B 1C 1D V Forward Voltage @ 1.0 A 1.0 V F t Reverse Recovery Time rr 50 ns I = 0.5 A, I = 1.0 A, I = 0.25 A F R RR I 10 Reverse Current @ rated V T = 25°C μA R R A 100 T = 100 C μA ° A C Total Capacitance T 15 pF V = 4.0 V, f = 1.0 MHz R 2001 EGF1A-EGF1D, Rev. D
