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Partno	Mfg	Dc	Qty	Available	Descript
ECH8657	SANYO	N/a	12000	avai	N-Channel Power MOSFET, 35V, 4.5A, 59mOhm, Dual ECH8

ECH8657 ,N-Channel Power MOSFET, 35V, 4.5A, 59mOhm, Dual ECH8Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage V 35 VDSS ..

ECH8657
N-Channel Power MOSFET, 35V, 4.5A, 59mOhm, Dual ECH8
Features • 4V drive• Halogen free compliance• Protection diode in

Speciﬁ cations
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS 35 V
Gate-to-Source Voltage VGSS ±20 V
Drain Current (DC) ID 4.5 A
Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 30 A
Allowable Power Dissipation PD When mounted on ceramic substrate (1200mm2 ×0.8mm) 1unit 1.3 W
Total Dissipation PT When mounted on ceramic substrate (1200mm2 ×0.8mm) 1.5 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Package Dimensions
unit : mm (typ)
7011A-001
ECH8657
N-Channel Silicon MOSFET General-Purpose Switching Device
Applications
Product & Package Information
• Package : ECH8
• JEITA, JEDEC : -
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL Marking
Electrical Connection
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : ECH8 4
0 to 0.02
Top View
Bottom View
ECH8657-TL-H

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