ECH8649 ,N-Channel Power MOSFET, 20V, 7.5A, 17mOhm, Dual ECH8Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage V 20 VDSS ..
ECH8653 ,N-Channel Power MOSFET, 20V, 7.5A, 20mOhm, Dual ECH8Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage V 20 VDSS ..
ECH8657 ,N-Channel Power MOSFET, 35V, 4.5A, 59mOhm, Dual ECH8Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage V 35 VDSS ..
ECH8649
N-Channel Power MOSFET, 20V, 7.5A, 17mOhm, Dual ECH8
Features • Low ON-resistance • 2.5V drive
• Best suited for LiB charging and discharging switch • Common-drain type
• Halogen free compliance • Protection diode in
Specifi cations
Absolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS 20 V
Gate-to-Source Voltage VGSS ±10 V
Drain Current (DC) ID 7.5 A
Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 40 A
Allowable Power Dissipation PD When mounted on ceramic substrate (900mm2 ×0.8mm) 1unit 1.4 W
Total Power Dissipation PT When mounted on ceramic substrate (900mm2 ×0.8mm) 1.5 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Package Dimensionsunit : mm (typ)
7011A-003
Product & Package Information• Package : ECH8
• JEITA, JEDEC : -
• Minimum Packing Quantity : 3,000 pcs./reel
Packing T ype : TL Marking
Electrical Connection
ECH8649N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain
6 : Drain
7 : Drain
8 : Drain
SANYO : ECH8 4
0 to 0.02
Top View
Bottom View
LOT No.
ECH8649-TL-H
