ECH8410 ,N-Channel Power MOSFET, 30V, 12A, 10mOhm, Single ECH8Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage V 30 VDSSGate-to-Sou ..
ECH8601 ,Nch+NchAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage ..
ECH8604 ,N CHANNEL MOS SILICON TRANSISTOR
ECH8605 ,Pch+PchAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage ..
ECH8606 ,Nch+NchAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage ..
ECH8613 ,Pch+PchAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage ..
ECH8410
N-Channel Power MOSFET, 30V, 12A, 10mOhm, Single ECH8
Features • Low ON-resistance. • 4V drive.• Halogen free compliance.• Protection diode in
Specifi cations
Absolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS 30 V
Gate-to-Source Voltage VGSS ±20 V
Drain Current (DC) ID 12 A
Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 60 A
Allowable Power Dissipation PD When mounted on ceramic substrate (900mm2 ×0.8mm) 1.6 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Package Dimensions unit : mm (typ.)
7011A-002
ECH8410N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications1 : Source
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
SANYO : ECH8 4
0 to 0.02
Top View
Bottom View
Product & Package Information• Package : ECH8
• JEITA, JEDEC : -
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL Marking
Electrical ConnectionECH8410-TL-H
Lot No.
