E53NA50 ,NABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0) 500 VDS GSV 500 VD ..
EA2-12 ,COMPACT AND LIGHTWEIGHTAPPLICATIONSElectronic switching systems, PBX, key telephone systems, automatic test equipment and ..
EA2-12NU ,COMPACT AND LIGHTWEIGHTFEATURESª Low power consumptionª Compact and light weightª 2 form c contact arrangementª Low magnet ..
EA2-12S ,COMPACT AND LIGHTWEIGHTFEATURESª Low power consumptionª Compact and light weightª 2 form c contact arrangementª Low magnet ..
EA2-12TNU ,COMPACT AND LIGHTWEIGHTAPPLICATIONSElectronic switching systems, PBX, key telephone systems, automatic test equipment and ..
EA2-4.5NU ,COMPACT AND LIGHTWEIGHTAPPLICATIONSElectronic switching systems, PBX, key telephone systems, automatic test equipment and ..
E53NA50
N
STE53NA50- CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR TYPICAL RDS(on)= 0.075Ω HIGH CURRENT POWER MODULE AVALANCHE RUGGED TECHNOLOGY VERYLARGE SOA- LARGE PEAK POWER
CAPABILITY EASY TO MOUNT SAME CURRENT CAPABILITY FOR THE
TWO SOURCE TERMINALS EXTREMELY LOW Rth (Junctionto case) VERYLOW INTERNAL PARASITIC
INDUCTANCE ISOLATED PACKAGE UL RECOGNIZED
APPLICATIONS SMPS& UPS MOTOR CONTROL WELDING EQUIPMENT OUTPUT STAGE FOR PWM, ULTRASONIC
CIRCUITS
INTERNAL SCHEMATIC DIAGRAMFebruary 1998
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value UnitVDS Drain-source Voltage (VGS =0) 500 V
VDGR Drain- gate Voltage (RGS =20 kΩ) 500 V
VGS Gate-source Voltage ±30 V Drain Current (continuous)atTc =25o C53 A Drain Current (continuous)atTc =100o C33 A
IDM(•) Drain Current (pulsed) 212 A
Ptot Total DissipationatTc =25o C460 W
Derating Factor 3.68 W/oC
Tstg Storage Temperature -55to 150 oC Max. Operating Junction Temperature 150 oC
VISO Insulation Withhstand Voltage (AC-RMS) 2500 V
(•) Pulse width limited bysafe operating area
TYPE VDSS RDS(on) IDSTE53NA50 500V < 0.085Ω 53A
ISOTOP1/7
THERMAL DATARthj-case
Rthc-h
Thermal Resistance Junction-case Max
Thermal Resistance Case-heatsink With Conductive
Grease Applied Max
0.05 C/W C/W
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value UnitIAR Avalanche Current, Repetitiveor Not-Repetitive
(pulse width limitedbyTj max, δ <1%) A
EAS Single Pulse Avalanche Energy
(startingTj =25oC,ID =IAR,VDD =50V)
1014 mJ
ELECTRICAL CHARACTERISTICS (Tcase =25oC unless otherwise specified)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. UnitV(BR)DSS Drain-source
Breakdown Voltage =1 mA VGS=0 500 V
IDSS Zero Gate Voltage
Drain Current (VGS =0)
VDS =Max Rating
VDS =Max Rating Tc =125oC
IGSS Gate-body Leakage
Current (VDS =0)
VGS= ± 30V ± 400 nA(∗)
Symbol Parameter Test Conditions Min. Typ. Max. UnitVGS(th) Gate Threshold
Voltage
VDS =VGS ID =1 mA 2.25 3 3.75 V
RDS(on) Static Drain-source On
Resistance
VGS =10V ID=27A 0.075 0.085 Ω
ID(on) On State Drain Current VDS >ID(on) xRDS(on)max
VGS =10V A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unitgfs (∗)Forward
Transconductance
VDS >ID(on)X RDS(on)MAX ID =27A 25 S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS =25Vf=1 MHz VGS =0 13
STE53NA50
2/7
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unittd(on)
Turn-on Time
Rise Time
VDD =250V ID =27A =4.7 Ω VGS =10V
(see test circuit, figure1)
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD =400V ID =53A VGS=10V 470
658 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unittr(Voff)
Off-voltage Rise Time
Fall Time
Cross-over Time
VDD =400V ID =53A =4.7 Ω VGS =10V
(see test circuit, figure3)
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. UnitISD
ISDM(•)
Source-drain Current
Source-drain Current
(pulsed)
VSD(∗) Forward On Voltage ISD =53A VGS =0 1.6 V
trr
Qrr
IRRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD=53A di/dt= 100 A/μs =100V Tj =150oC
(see test circuit, figure3)
(∗) Pulsed: Pulse duration=300μs, duty cycle1.5%
(•) Pulse widthlimitedby safeoperating area
Safe Operating Areafor Thermal Impedance
STE53NA503/7
Output Characteristics
Transconductance
Gate Chargevs Gate-sourceVoltage
Transfer Characteristics
Static Drain-source On Resistance
Capacitance Variations
STE53NA504/7
Normalized Gate Threshold Voltagevs
Temperature
Source-drain Diode Forward Characteristics
Fig.2: Gate Charge test Circuit
Normalized On Resistancevs Temperature
Fig.1: Switching Times Test Circuits For
Resistive Load
Fig.3: Test Circuit For Inductive Load Switching
And Diode Recovery Times
STE53NA505/7
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX. 11.8 12.2 0.466 0.480 8.9 9.1 0.350 0.358 1.95 2.05 0.076 0.080 0.75 0.85 0.029 0.033 12.6 12.8 0.496 0.503 25.15 25.5 0.990 1.003 31.5 31.7 1.240 1.248 4 0.157 4.1 4.3 0.161 0.169 14.9 15.1 0.586 0.594 30.1 30.3 1.185 1.193 37.8 38.2 1.488 1.503 4 0.157 7.8 8.2 0.307 0.322
ISOTOP MECHANICAL DATA
STE53NA506/7
