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DTC114EET1G from ON,ON Semiconductor

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16.113ms

DTC114EET1G

Manufacturer: ON

Bias Resistor Transistor

Partnumber Manufacturer Quantity Availability
DTC114EET1G ON 3000 In Stock

Description and Introduction

Bias Resistor Transistor The part **DTC114EET1G** is manufactured by **ON Semiconductor**.  

### Key Specifications:  
- **Type**: Digital Transistor (BJT + Resistor)  
- **Polarity**: NPN  
- **Collector-Emitter Voltage (VCEO)**: 50V  
- **Collector Current (IC)**: 100mA  
- **DC Current Gain (hFE)**: 100 (min)  
- **Input Resistor (R1)**: 10kΩ  
- **Base-Emitter Resistor (R2)**: 10kΩ  
- **Power Dissipation (PD)**: 200mW  
- **Package**: SOT-416 (SC-75)  

This transistor is designed for switching and amplification in digital circuits.  

(Source: ON Semiconductor datasheet for DTC114EET1G.)

Partnumber Manufacturer Quantity Availability
DTC114EET1G 20 In Stock

Description and Introduction

Bias Resistor Transistor The part **DTC114EET1G** is manufactured by **ON Semiconductor**. Here are its key specifications:

- **Type**: Digital Transistor (NPN with built-in resistors)
- **Collector-Base Voltage (VCBO)**: 50V
- **Collector-Emitter Voltage (VCEO)**: 50V
- **Emitter-Base Voltage (VEBO)**: 5V
- **Collector Current (IC)**: 100mA
- **DC Current Gain (hFE)**: 100 (min) at IC = 5mA, VCE = 5V
- **Input Resistor (R1)**: 10kΩ
- **Base Resistor (R2)**: 10kΩ
- **Power Dissipation (PD)**: 200mW
- **Package**: SOT-416 (SC-75)
- **Operating Temperature Range**: -55°C to +150°C

This transistor is designed for switching applications in digital circuits.

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