DTC114E ,NPN SILICON BIAS RESISTOR TRANSISTORELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)ACharacteristic Symbol Min ..
DTC114E ,NPN SILICON BIAS RESISTOR TRANSISTORELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
DTC114EE ,Pre-biased TransistorsTransistor) contains a single transistor with a monolithic bias networkconsisting of two resistors; ..
DTC114EET1 ,Bias Resistor TransistorMAXIMUM RATINGS (T = 25°C unless otherwise noted)ASC−75/SOT−416CASE 463xx MRating Symbol Value Un ..
DTC114EET1G ,Bias Resistor TransistorELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
DTC114EET1G ,Bias Resistor TransistorDTC114EET1 SeriesBias Resistor TransistorNPN Silicon Surface Mount Transistorwith Monolithic Bias R ..
EGF1A ,Fast Rectifiers (Glass Passivated)18-Mar-02 1Patented*EGF1A thru EGF1DVishay Semiconductorsformerly General SemiconductorRatings and ..
EGF1B ,Fast Rectifiers (Glass Passivated)Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.Parameter Sy ..
EGF1C ,Fast Rectifiers (Glass Passivated)Features• Low forward voltage drop.• Low profile package.• Fast switching for high efficiency.SMA/D ..
EGF1D ,Fast Rectifiers (Glass Passivated)Features• Low forward voltage drop.• Low profile package.• Fast switching for high efficiency.SMA/D ..
EGL34C ,Surface Mount Glass Passivated, Ultrafast Rectifier, Forward Current 0.5A03-Apr-03 1Patented*BYM07-50 thru BYM07-400, EGL34A thru EGL34GVishay Semiconductorsformerly Genera ..
EGL34D ,SURFACE MOUNT GLASS PASSIVATED JUNCTION FAST EFFICIENT RECTIFIER®BYM07-50 thru BYM07-400, EGL34A thru EGL34GVishay Semiconductorsformerly General SemiconductorSurf ..
DTC114E-DTC143T
NPN SILICON BIAS RESISTOR TRANSISTOR
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Preferred Devices---
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base–emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the TO–92
package which is designed for through hole applications.
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
THERMAL CHARACTERISTICS
DEVICE MARKING AND RESISTOR VALUES Device mounted on a FR–4 glass epoxy printed circuit board using the
minimum recommended footprint.
