DSR520 ,Small-signal Schottky barrier diodeElectrical Characteristics (Ta = 25°C) TestCharacteristic Symbol Test Condition Min Typ. Max UnitCi ..
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DSS306-55FZ103N100 , FERRITE BEAD INDUCTORS, EMI SUPPRESSION FILTER COMPACT DISC-TYPE
EE2-12NU ,Compact and lightweight, High breakdown voltage, Surface mounting type
EE2-12NUX-L ,Compact and lightweight, High breakdown voltage, Surface mounting type
EE2-24NU ,Compact and lightweight, High breakdown voltage, Surface mounting type
EE2-3ND ,High Insulation, High breakdown voltage, compact and lightweight, Surface mounting type
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DSR520
Small-signal Schottky barrier diode
DSR520 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
DSR520 High-Speed Switching Applications Low reverse current: IR = 5 μA (max)
Absolute Maximum Ratings (Ta = 25°C) Mounted on a glass-epoxy circuit board of 20 mm × 20 mm, pad dimensions of 4 mm × 4 mm.
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Equivalent Circuit (Top View) Marking Weight: 1.4 mg (typ.)
Unit: mm
