DSF521CT ,Small-signal Schottky barrier diodeElectrical Characteristics (Ta = 25°C) TestCharacteristic Symbol Test Condition Min Typ. Max UnitCi ..
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DSF521CT
Small-signal Schottky barrier diode
DSF521CT TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
DSF521CT High Speed Switching Application
Low forward voltage : VF (3) = 0.5V (max)
Abusolute Maximum Ratings (Ta = 25°C) *: Mounted on a glass epoxy circuit board of 20 mm × 20 mm,
pad dimension of 4 mm × 4 mm.
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Electrical Characteristics (Ta = 25°C)
Equivalent Circuit (top view) Marking Weight: 0.7 mg (typ.)
Unit: mm
