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DSF521
Small-signal Schottky barrier diode
DSF521 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
DSF521 High Speed Switching Application
Low forward voltage : VF (3) = 0.5V (max.)
Abusolute Maximum Ratings (Ta = 25°C) *: Mounted on a glass epoxy circuit board of 20 × 20 mm,
pad dimension of 4 × 4 mm.
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/
“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Equivalent Circuit (top view) Marking Weight: 1.4 mg (typ.)
Unit: mm
