DS9502P+ ,ESD Protection DiodeFEATURESSYMBOL AND CONVENTIONS§ Zener characteristic with voltage snap–backCto protect against ESD ..
DS9503 ,ESD Protection Diode with ResistorsFEATURES SYMBOL AND CONVENTI Zener characteristic with voltage snap–back C to protect against ..
DS9503P ,ESD Protection Diode with Resistors
DS9503P. ,ESD Protection Diode with Resistors
DS9503P+ ,ESD Protection Diode with ResistorsFEATURES SYMBOL AND CONVENTI Zener characteristic with voltage snap–back C to protect against ..
DS9503P+ ,ESD Protection Diode with Resistors19-4699; 7/09 DS9503 ESD Protection Diode with Resistors ONS SPECIAL
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DS9502P+
ESD Protection Diode
SPECIAL FEATURESZener characteristic with voltage snap–back
to protect against ESD hitsHigh avalanche voltage, low leakage and low
capacitance avoid signal attenuationCompatible to all 5V logic familiesSpace saving, low inductance TSOC surface
mount packageSymmetric dual–port bondout to maximize
energy dissipation in protection deviceIndustrial temperature range
SYMBOL AND CONVENTIONS
PACKAGE OUTLINE
ORDERING INFORMATIONDS9502P6-lead TSOC package
DESCRIPTIONThis DS9502 was designed as an additional ESD protection for SRAM–based battery–buffered portable
memory modules. The memory chips used for these modules have already a strong ESD–protection
structure on their I/O line. Together with the DS9502 the ESD protection level is raised to more than
27 kV (IEC 801–2 Reference model). In case of abnormal ESD hits beyond its maximum ratings the
DS9502 will eventually fail “short” thus preventing further damage.
During normal operation the DS9502 behaves like a regular 7.5V Zener Diode. When the voltage exceeds
the trigger voltage, the I/V characteristic of the device will “snapback” allowing the same or higher
amount of current to flow, but at a significantly lower voltage. As long as a minimum current or voltage
is maintained, the device will stay in the “snapback mode”. If the voltage or the current falls below the
holding voltage or holding current, the device will abruptly change to its normal mode and conduct only a
small leakage current.
VCA123
TOP VIEW
TSOC SURFACE MOUNT PACKAGE
3.7 X 4.0 X 1.5 mm
See Mech. Drawings
Section
SIDE VIEW
DS9502
ESD Protection Diode
www.dalsemi.com
DS9502
DC CHARACTERISTICS Figure 1
DC CHARACTERISTICS DETAIL DRAWING Figure 2
TEST PULSE WAVEFORM Figure 3
TYPICAL APPLICATION Figure 4
DS9502
PHYSICAL SPECIFICATIONSSize See mechanical drawing
Weight 0.5 grams
ABSOLUTE MAXIMUM RATINGS*Operating Temperature –40°C to +85°C
Storage Temperature –55°C to +125°C
Soldering Temperature 260°C for 10 seconds
Continuous DC Current Through Package 80 mAThis is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operation sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods of time may affect reliability.
ELECTRICAL CHARACTERISTICS (-40°C to +85°C)
PARAMETERSYMBOLMINTYPMAXUNITSNOTESLeakage CurrentIL30100nA2
Avalanche VoltageVAV7.47.8V1,3
Trigger VoltageVTRIGGER9.09.5V1
Trigger CurrentITRIGGER6001000mA
Holding VoltageVHOLD5.5V1
Holding CurrentIHOLD30mA
Forward Voltage (-10 mA)VF-0.7-0.8V4
Forward Current (-0.7V)IF-10-100mA4
Maximum Peak CurrentIPP2.0A5
Continuous Current Through DiodeICC±160mA6
CAPACITANCE (tA=25°C)
PARAMETERSYMBOLMINTYPMAXUNITSNOTESJunction Capacitance (5V)CJ555pF1
Junction Capacitance (0V)CJ0100pF1
THERMAL RESISTANCE
PARAMETERSYMBOLMINTYPMAXUNITSNOTESJunction To PackageRΘJC75K/W
Junction To AmbientRΘJA200K/W
NOTES:1. All voltages are referenced from Cathode to Anode.
2. At 7.0V.
3. At 0.3 μA.
4. Typical values at room temperature.
5. See pulse specification.
This datasheet has been :
www.ic-phoenix.com
Datasheets for electronic components.
