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DS75325NNSN/a17avaiMemory Drivers


DS75325N ,Memory Driversfeatures Node R which allows extremeYTTL compatibleflexibility in source current selection by contr ..
DS75361N ,Dual TTL-to-MOS Driverapplications. The device hasSSYTransient overdrive minimizes power dissipationbeen optimized for op ..
DS75361N ,Dual TTL-to-MOS DriverFeaturesYCapable of driving high-capacitance loadsThe DS75361 is a monolithic integrated dual TTL-t ..
DS75365M ,Quad TTL-to-MOS DriverFeaturesYQuad positive-logic NAND TTL-to-MOS driverYVersatile interface circuit for use between TTL ..
DS75365N ,Quad TTL-to-MOS DriverFeaturesYQuad positive-logic NAND TTL-to-MOS driverYVersatile interface circuit for use between TTL ..
DS75451M ,DS75450, DS75451, DS75452, DS75453, DS75454 Dual Peripheral Driver [Life-time buy]Featuresn 300 mA output current capabilityThe DS7545X series of dual peripheral drivers is a family ..
ECH8401 ,Medium Output MOSFETsAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage ..
ECH8402 ,Medium Output MOSFETsAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage ..
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ECH8410 ,N-Channel Power MOSFET, 30V, 12A, 10mOhm, Single ECH8Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage V 30 VDSSGate-to-Sou ..
ECH8601 ,Nch+NchAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage ..
ECH8604 ,N CHANNEL MOS SILICON TRANSISTOR


DS75325N
Memory Drivers
TL/F/9755
DS75325
Memory
Drivers
June 1992
DS75325
Memory Drivers
General Description
The DS75325isa monolithic memory driver which features
high current outputsas wellas internal decodingof logic
inputs. This circuitis designedforusewith magnetic memo-
ries.
The circuit containstwo600mA sink-switch pairs andtwo
600mA source-switch pairs. InputsA andB determine
source selection whilethe source strobe (S1) allowsthe
selected sourceturnon.Inthe same manner, inputsCand determine sink selection whilethesink strobe (S2) allows
the selected sinkturnon.
Sink-output collectors featurean internal pull-up resistorin
parallelwitha clamping diode connectedto VCC2. Thispro-
tects the outputs from voltage surges associated with
switching inductive loads.
The source stage features NodeR which allows extreme
flexibilityin source current selectionby controllingthe
amountof base driveto each sourcetransistor. This method settingthe base drive bringsthe power associated with
the resistor outsidethe package thereby allowingthe circuit operateat higher source currentsfora given junction
temperature.Ifthis methodof source current settingisnot
desired, then NodesRand RINTcanbe shorted externally,
activatingan internal resistor connected from VCC2to Node This providesadequatebase drivefor source currentsup 375mA with VCC2e 15Vor600mA with VCC2e 24V.
Features 600mA output capability 24V output capability Dualsink and dual source outputs Fast switching times Source base drive externally adjustable Input clamping diodes TTL compatible
Connection Diagram
Dual-In-Line Package
TL/F/9755–2
Top View
OrderNumberDS75325N
SeeNS Package Number N14A
Truth Table
AddressInputs StrobeInputs Outputs
Source Sink Source Sink Source Sink B CD S1 S2 W X Y Z HX X L H ON OFF OFF OFF L X X L H OFFON OFF OFF XL H H L OFF OFFON OFF X HL H L OFF OFF OFFON XX X H H OFF OFF OFF OFF H HH X X OFF OFF OFF OFFeHigh Level,Le LowLevel,Xe Irrelevant
Note:Notmorethanone outputistobeonatany onetime.
C1995National SemiconductorCorporation RRD-B30M115/PrintedinU.S.A.
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