DS2016 ,2K x 8 3V/5V Operation Static RAMFEATURES PIN ASSIGNMENT Low-power CMOS designA7 1 24 V Standby currentCCA6 2 23 A8 50nA max at t ..
DS2016-100 ,2k x 8 3V/5V Operation Static RAMFEATURES PIN ASSIGNMENT§ Low-power CMOS designA7 1 24 V§ Standby currentCCA6 2 23 A8- 50 nA max at ..
DS2030Y-100# ,Single-Piece 256kb Nonvolatile SRAMFeatures2♦ Single-Piece, Reflowable, 27mm PBGA PackageThe DS2030 is a 256kb reflowable nonvolatile ..
DS2030Y-70# ,Single-Piece 256kb Nonvolatile SRAMApplicationsRAID Systems and Servers POS TerminalsPin Configuration appears at end of data sheet.In ..
DS2045AB-100# ,Single-Piece 1Mb Nonvolatile SRAMELECTRICAL CHARACTERISTICS(V = 5V ±5% for DS2045AB, V = 5V ±10% for DS2045Y, T = -40°C to +85°C.)CC ..
DS2045AB-70# ,Single-Piece 1Mb Nonvolatile SRAMApplicationsRAID Systems and Servers POS TerminalsPin Configuration appears at end of data sheet.In ..
DS2016
2K x 8 3V/5V Operation Static RAM
FEATURESLow-power CMOS designStandby current50nA max at tA = 25°C VCC = 3.0V100nA max at tA = 25°C VCC = 5.5V1µA max at tA = 60°C VCC = 5.5VFull operation for VCC = 5.5V to 2.7VData retention voltage = 5.5V to 2.0VFast 5V access timeDS2016-100100nsDS2016-150150nsReduced-speed 3V access timeDS2016-100250nsDS2016-150250nsOperating temperature range of -40°C to+85°CFull static operationTTL compatible inputs and outputs over
voltage range of 5.5V to 2.7VAvailable in 24-pin DIP and 24-pin SOpackagesSuitable for both battery operated and battery
backup applications
PIN ASSIGNMENT
PIN DESCRIPTIONA0 to A10- Address Inputs
DQ0 to DQ7- Data Input/Output- Chip Enable Input- Write Enable Input- Output Enable Input
VCC- Power Supply Input 2.7V - 5.5V
GND- Ground
DESCRIPTIONThe DS2016 2k x 8 3V/5V Operation Static RAM is a 16,384-bit, low-power, fully static random access
memory organized as 2048 words by 8 bits using CMOS technology. The device operates from a single
power supply with a voltage input between 2.7V and 5.5V. The chip enable input (CE) is used for device
selection and can be used in order to achieve the minimum standby current mode, which facilitates both
battery operated and battery backup applications. The device provides access times as fast as 100ns when
operated from a 5V power supply input and also provides relatively good performance of 250ns accesswhile operating from a 3V input. The device maintains TTL-level inputs and outputs over the input
voltage range of 2.7V to 5.5V. The DS2016 is most suitable for low-power applications where battery
operation or battery backup for nonvolatility is required. The DS2016 is a JEDEC-standard 2k x 8 SRAM
and is pin-compatible with ROM and EPROM of similar density.
DS2016
2k x 8 3V/5V Operation
Static RAMVCC
DQ7
DQ6
DQ5
DQ4
DQ3
DQ0
DQ1
DQ2
GND
DS2016 24-Pin DIP (600mil)DS2016R 24-Pin SO (300mil)
DS2016
OPERATION MODE
ABSOLUTE MAXIMUM RATINGS
CAPACITANCE(TA= 25°C)
+5-VOLT OPERATION
RECOMMENDED DC OPERATING CONDITIONS(TA= -40°C to +85°C)
DC CHARACTERISTICS(TA= -40°C to +85°C; VCC = 5V ±10%)
DS2016
AC CHARACTERISTICS READ CYCLE(TA= -40°C to +85°C; VCC = 5V ±10%)
AC CHARACTERISTICS WRITE CYCLE(TA= -40°C to +85°C; VCC = 5V ±10%)
DATA RETENTION CHARACTERISTICS(TA = -40°C to +85°C)
* Typical values are at 25°C
DS2016
+3-VOLT OPERATION
RECOMMENDED DC OPERATING CONDITIONS(TA = -40°C to +85°C)
DC CHARACTERISTICS(TA = -40°C to +85°C; VCC = 2.7V to 3.5V)
AC CHARACTERISTICS READ CYCLE(TA = -40°C to +85°C; VCC = 2.7V to 3.5V)
DS2016
AC CHARACTERISTICS WRITE CYCLE(TA = -40°C to +85°C; VCC = 2.7V to 3.5V)
DATA RETENTION CHARACTERISTICS(TA = -40°C to +85°C)
* Typical values are at 25°C
TIMING DIAGRAM: READ CYCLESEE NOTE 1
DS2016
TIMING DIAGRAM: WRITE CYCLE 1SEE NOTES 2, 3, 4, 5, 6, AND 7
TIMING DIAGRAM: WRITE CYCLE 2SEE NOTES 2, 3, 4, 5, 6, AND 7
