DS2016-100 ,2k x 8 3V/5V Operation Static RAMFEATURES PIN ASSIGNMENT§ Low-power CMOS designA7 1 24 V§ Standby currentCCA6 2 23 A8- 50 nA max at ..
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DS2016-100
2k x 8 3V/5V Operation Static RAM
FEATURESLow-power CMOS designStandby current50 nA max at tA = 25°C VCC = 3.0V- 100 nA max at tA = 25°C VCC = 5.5V1 µA max at tA = 60°C VCC = 5.5VFull operation for VCC = 5.5V to 2.7V§ Data retention voltage = 5.5V to 2.0VFast 5V access timeDS2016 - 100100 nsDS2016 - 150150 ns§ Reduced-speed 3V access timeDS2016 - 100250 nsDS2016 - 150250 ns§ Operating temperature range of -40°C to
+85°CFull static operationTTL compatible inputs and outputs over
voltage range of 5.5V to 2.7 volts.§ Available in 24-pin DIP and 24-pin SOIC
packagesSuitable for both battery operated and battery
backup applications
PIN ASSIGNMENT
PIN DESCRIPTIONA0 - A10- Address Inputs
DQ0 - DQ7- Data Input/Output- Chip Enable Input- Write Enable Input- Output Enable Input
VCC- Power Supply Input 2.7V - 5.5VGND- Ground
DESCRIPTIONThe DS2016 2k x 8 3V/5V Operation Static RAM is a 16,384-bit, low-power, fully static random access
memory organized as 2048 words by 8 bits using CMOS technology. The device operates from a single
power supply with a voltage input between 2.7 and 5.5 volts. The chip enable input (CE) is used for
device selection and can be used in order to achieve the minimum standby current mode, which facilitates
both battery operated and battery backup applications. The device provides access times as fast as 100 nswhen operated from a 5-volt power supply input and also provides relatively good performance of 250 ns
access while operating from a 3-volt input. The device maintains TTL-level inputs and outputs over the
input voltage range of 2.7 to 5.5 volts. The DS2016 is most suitable for low-power applications where
battery operation or battery backup for nonvolatility is required. The DS2016 is a JEDEC-standard 2k x 8
SRAM and is pin-compatible with ROM and EPROM of similar density.
2k x 8 3V/5V Operation Static RAMDS2016 24-Pin DIP (600-mil)DS2016R 24-Pin SOIC (300-mil)
DS2016
OPERATION MODE
ABSOLUTE MAXIMUM RATINGS
CAPACITANCE(TA= 25°C)
+5-VOLT OPERATION
RECOMMENDED DC OPERATING CONDITIONS(TA= -40°C to +85°C)
DC CHARACTERISTICS(TA= -40°C to +85°C; VCC = 5V 10%)
DS2016
AC CHARACTERISTICS READ CYCLE(TA= -40°C to +85°C; VCC = 5V 10%)
SYMBOL
AC CHARACTERISTICS WRITE CYCLE(TA= -40°C to +85°C; VCC = 5V10%)
DATA RETENTION CHARACTERISTICS(TA = -40°C to +85°C)
* Typical values are at 25°C
DS2016
+3-VOLT OPERATION
RECOMMENDED DC OPERATING CONDITIONS(TA = -40°C to +85°C)
DC CHARACTERISTICS(TA = -40°C to +85°C; VCC = 2.7V to 3.5V)
AC CHARACTERISTICS READ CYCLE(TA = -40°C to +85°C; VCC = 2.7V to 3.5V)
DS2016
AC CHARACTERISTICS WRITE CYCLE(TA = -40°C to +85°C; VCC = 2.7V to 3.5V)
DATA RETENTION CHARACTERISTICS(TA = -40°C to +85°C)
* Typical values are at 25°C
TIMING DIAGRAM: READ CYCLESEE NOTE 1
DS2016
TIMING DIAGRAM: WRITE CYCLE 1SEE NOTES 2, 3, 4, 5, 6 AND 7
TIMING DIAGRAM: WRITE CYCLE 2SEE NOTES 2, 3, 4, 5, 6 AND 7
