DS1220Y120 ,16K Nonvolatile SRAMDS1220Y16k Nonvolatile SRAMwww.dalsemi.com
DS1220Y-120 ,16K Nonvolatile SRAMDS1220Y16k Nonvolatile SRAMwww.dalsemi.com
DS1220Y-120 ,16K Nonvolatile SRAMPIN DESCRIPTIONA0-A10 - Address InputsDQ0-DQ7 - Data In/Data OutCE - Chip EnableWE - Write EnableOE ..
DS1220Y-120 ,16K Nonvolatile SRAMPIN DESCRIPTIONA0-A10 - Address InputsDQ0-DQ7 - Data In/Data OutCE - Chip EnableWE - Write EnableOE ..
DS1220Y-120+ ,16K Nonvolatile SRAMPIN DESCRIPTIONA0-A10 - Address InputsDQ0-DQ7 - Data In/Data OutCE - Chip EnableWE - Write EnableOE ..
DS1220Y-150 ,16K Nonvolatile SRAMPIN DESCRIPTIONA0-A10 - Address InputsDQ0-DQ7 - Data In/Data OutCE - Chip EnableWE - Write EnableOE ..
DTA114YM , -100mA / -50V Digital transistors (with built-in resistors)
DTA114YS , DTA/DTC SERIES
DTA115EE ,50 V, digital transistorELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)ACharacteristic Symbol Min ..
DTA115EET1 ,Bias Resistor Transistor3DTA114EET1 Series25020015010050 R = 600°C/WJA0-50 0 50 100 150T , AMBIENT TEMPERATURE (°C)AFigur ..
DTA115EET1 ,Bias Resistor TransistorTHERMAL CHARACTERISTICSRating Symbol Value Unit*For additional information on our Pb−Free strategy ..
DTA115EET1G , Digital Transistors (BRT) R1 = 100 k, R2 = 100 k
DS1220AB-100IND-DS1220AB-120IND-DS1220AB-120IND+-DS1220AD-200 IND-DS1220Y-100-DS1220Y120-DS1220Y-120-DS1220Y-150-DS1220Y-200
2k x 8 CMOS nonvolatile SRAM, 100ns
FEATURES10 years minimum data retention in the
absence of external powerData is automatically protected during power
lossDirectly replaces 2k x 8 volatile static RAM
or EEPROMUnlimited write cyclesLow-power CMOSJEDEC standard 24-pin DIP packageRead and write access times as fast as 100 nsFull ±10% operating rangeOptional industrial temperature range of-40°C to +85°C, designated IND
PIN ASSIGNMENT24-Pin ENCAPSULATED PACKAGE720-mil EXTENDED
PIN DESCRIPTIONA0-A10 - Address Inputs
DQ0-DQ7 - Data In/Data Out- Chip Enable- Write Enable- Output EnableVCC - Power (+5V)
GND - Ground
DESCRIPTIONThe DS1220Y 16k Nonvolatile SRAM is a 16,384-bit, fully static, nonvolatile RAM organized as 2048words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which
constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium
energy source is automatically switched on and write protection is unconditionally enabled to prevent
data corruption. The NV SRAM can be used in place of existing 2k x 8 SRAMs directly conforming to
the popular bytewide 24-pin DIP standard. The DS1220Y also matches the pinout of the 2716 EPROM orthe 2816 EEPROM, allowing direct substitution while enhancing performance. There is no limit on the
number of write cycles that can be executed and no additional support circuitry is required for
microprocessor interfacing.
DS1220Y
16k Nonvolatile SRAMVCC
DQ0
DQ1
GND
DQ2
DQ7
DQ6
DQ5
DQ3
DQ4
DS1220Y
READ MODEThe DS1220Y executes a read cycle whenever WE (Write Enable) is inactive (high) and CE (Chip
Enable) and OE (Output Enable) are active (low). The unique address specified by the 11 address inputs(A0-A10) defines which of the 2048 bytes of data is to be accessed. Valid data will be available to the
eight data output drivers within tACC (Access Time) after the last address input signal is stable, providing
that CE and OE access times are also satisfied. If CE and OE access times are not satisfied, then data
access must be measured from the later-occurring signal and the limiting parameter is either tCO for CEor
tOE for OE rather than address access.
WRITE MODEThe DS1220Y executes a write cycle whenever the WE and CE signals are active (low) after address
inputs are stable. The later-occurring falling edge of CE or WE will determine the start of the write
cycle. The write cycle is terminated by the earlier rising edge of CE or WE. All address inputs must be
kept valid throughout the write cycle. WEmust return to the high state for a minimum recovery time
(tWR) before another cycle can be initiated. The OE control signal should be kept inactive (high) during
write cycles to avoid bus contention. However, if the output drivers are enabled (CE and OE active)
then WE will disable the outputs in tODW from its falling edge.
DATA RETENTION MODEThe DS1220Y provides full-functional capability for VCC greater than 4.5 volts and write protects at 4.25
nominal. Data is maintained in the absence of VCC without any additional support circuitry. TheDS1220Y constantly monitors VCC. Should the supply voltage decay, the NV SRAM automatically write
protects itself, all inputs become “don’t care,” and all outputs become high-impedance. As VCC falls
below approximately 3.0 volts, a power switching circuit connects the lithium energy source to RAM to
retain data. During power-up, when VCC rises above approximately 3.0 volts, the power switching circuit
connects external VCC to RAM and disconnects the lithium energy source. Normal RAM operation canresume after VCC exceeds 4.5 volts.
DS1220Y
ABSOLUTE MAXIMUM RATINGS*Voltage on Any Pin Relative to Ground -0.3V to +7.0V
Operating Temperature 0°C to 70°C; -40°C to +85°C for IND parts
Storage Temperature -40°C to +70°C; -40°C to +85°C for IND parts
Soldering Temperature 260°C for 10 secondsThis is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operation sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods of time may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS (TA : See Note 10)
DC ELECTRICAL CHARACTERISTICS (TA : See Note 10; VCC = 5V ± 10%)
CAPACITANCE (T A = 25°C)
DS1220Y
AC ELECTRICAL CHARACTERISTICS (TA : See Note 10; VCC =5.0V ± 10%)
DS1220Y
READ CYCLESEE NOTE 1
WRITE CYCLE 1SEE NOTES 2, 3, 4, 6, 7, 8 AND 12
WRITE CYCLE 2
DS1220Y
POWER-DOWN/POWER-UP CONDITIONSEE NOTE 11
POWER-DOWN/POWER-UP TIMING (TA = 25°C)
WARNING:Under no circumstance are negative undershoots, of any amplitude, allowed when device is in battery
backup mode.
NOTES:1. WEis high for a read cycle.
2. OE= VIH or VIL . If OE = VIH during a write cycle, the output buffers remain in a high impedance
state.
3. tWP is specified as the logical AND of CE and WE. tWP is measured from the latter of CE orWE
going low to the earlier of CEor WE going high.
4. tDS are measured from the earlier of CE or WE going high.
5. These parameters are sampled with a 5 pF load and are not 100% tested.
