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DMV1500L
DAMPER + MODULATION DIODE FOR VIDEO
DMV1500LDAMPER + MODULATION DIODE FOR VIDEO
ABSOLUTE RATINGS (limiting values, per diode) Fullkitin one package High breakdown voltage capability Very fast recovery diode Specified turnon switching characteristics Low static and peak forward voltage dropfor low
dissipation Insulated version:
Insulated voltage= 2500 VRMS
Capacitance=7pF Planar technology allowing high quality and
best electrical characteristics Outstanding performanceof well proven DTV damper and new faster Turbo2 600Vtechnologyas modulation
FEATURES AND BENEFITSHigh voltage semiconductor especially designed
for horizontal deflection stagein standard and high
resolution video display with E/W correction.
The insulated TO-220AB package includes both
the DAMPER diode and the MODULATION diode.
Assembled on automated line,it offers excellent
insulating and dissipating characteristics, thanks the internal ceramic insulation layer.
DESCRIPTION
MAIN PRODUCT CHARACTERISTICS
DMV1500L
THERMAL RESISTANCESPulsetest: *tp= 380μs,δ <2%
**tp=5ms,δ <2% evaluatethe maximum conductionlossesofthe DAMPER diodeuse thefollowingequations:
P=1.2xIF(AV)+ 0.075xIF2 (RMS)
STATIC ELECTRICAL CHARACTERISTICS OF THE DAMPER DIODESPulsetest: *tp=380μs,δ <2%tp=5ms,δ <2% evaluatethe maximum conductionlossesofthe MODULATION diodeusethe following equations:
P=1.12xIF(AV)+ 0.092xIF2 (RMS)
STATIC ELECTRICAL CHARACTERISTICS OF THE MODULATION DIODE
RECOVERY CHARACTERISTICS OF THE DAMPER DIODE
DMV1500L
TURN-ON SWITCHING CHARACTERISTICS OF THE DAMPER DIODE
RECOVERY CHARACTERISTICS OF THE MODULATION DIODE
TURN-ON SWITCHING CHARACTERISTICS OF THE MODULATION DIODE
DMV1500L012 34560.0
PF(av)(W)
Fig. 1-2: Power dissipation versus peak forward
current (triangular waveform,δ= 0.45) (modula-
tion diode).
012 34560.0
PF(av)(W)
Fig. 1-1: Power dissipation versus peak forward
current (triangular waveform,δ= 0.45) (damper
diode). 25 50 75 100 125 1500.0
IF(av)(A)
Fig. 2-2: Average forward current versus ambient
temperature (modulation diode). 25 50 75 100 125 1500.0
IF(av)(A)
Fig. 2-1: Average forward current versus ambient
temperature (damper diode).
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.50
IFM(A)
Fig. 3-2: Forward voltage drop versus forward cur-
rent (modulation diode).
0.0 0.5 1.0 1.5 2.0 2.5 3.00
IFM(A)
Fig. 3-1: Forward voltage drop versus forward cur-
rent (damper diode).
DMV1500L1E-3 1E-2 1E-1 1E+00.1
K=[Zth(j-c)/Rth(j-c)]
Fig.4: Relative variationof thermal impedance
junctionto case versus pulse duration.
1E-3 1E-2 1E-1 1E+00
IM(A)
Fig. 5-2: Non repetitive surge peak forward current
versus overload duration (modulation diode).
1E-3 1E-2 1E-1 1E+00
IM(A)
Fig. 5-1: Non repetitive surge peak forward current
versus overload duration (damper diode).
0.1 1.0 10.0 100.00
Qrr(nC)
Fig. 6-2: Reverse recovery charges versus diF/dt
(modulation diode).
0.1 0.2 0.5 1.0 5.00.0
Qrr(nC)
Fig. 6-1: Reverse recovery charges versus diF/dt
(damper diode).
0.1 0.2 0.5 1.0 5.00.0
IRM(A)
Fig. 7-1: Reverse recovery current versus diF/dt
(damper diode).
DMV1500L 20 40 60 80 100 120 140 160 180 2000
VFP(V)
Fig. 8-2: Transient peak forward voltage versus
dIF/dt (modulation diode). 20 40 60 80 100 120 1400
VFP(V)
Fig. 8-1: Transient peak forward voltage versus
dIF/dt (damper diode). 20 40 60 80 100 120 140 160 180 2000
tfr(ns)
Fig. 9-2: Forward recovery time versus dIF/dt
(modulation diode). 20 40 60 80 100 120 140200
tfr(ns)
Fig. 9-1: Forward recovery time versus dIF/dt
(damper diode). 10 100 2000
IRM(A)
Fig. 7-2: Reverse recovery current versus diF/dt
(modulation diode). 20 40 60 80 100 120 1400.0
VFP,IRM,Qrr[Tj] / VFP,IRM,Qrr[Tj=125°C]
Fig. 10-1: Dynamic parameters versus junction
temperature (damper diode).
