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DMV1500H-DMV1500H.
DAMPER + MODULATION DIODE FOR VIDEO
DMV1500HDAMPER + MODULATION DIODE FOR VIDEO
ABSOLUTE RATINGS (limiting values,per diode) Fullkitinone package High breakdown voltage capability Very fast recovery diode Specified turnon switching characteristics Low staticand peak forward voltage dropforlow
dissipation Insulated version:
Insulated voltage= 2500 VRMS
Capacitance=7pF Planar technology allowing high quality and
best electrical characteristics Outstanding performanceof well proven DTV damper and new faster Turbo2 600Vtechnologyas modulation
FEATURES AND BENEFITSHigh voltage semiconductor especially designed
for horizontal deflection stagein standard and high
resolution video display with E/W correction.
The insulated TO-220AB package includes both
the DAMPER diode andthe MODULATION diode.
Assembledon automated line,it offers excellent
insulating and dissipating characteristics, thanksthe internal ceramic insulation layer.
DESCRIPTION
MAIN PRODUCT CHARACTERISTICS
DMV1500H
THERMAL RESISTANCESPulsetest: *tp= 380μs,δ <2%
**tp=5ms,δ <2% evaluatethe maximum conductionlossesofthe DAMPER diodeuse thefollowingequations:
P=1.35xIF(AV)+ 0.059xIF2 (RMS)
STATIC ELECTRICAL CHARACTERISTICSOF THE DAMPER DIODESPulsetest: *tp=380μs,δ <2%tp=5ms,δ <2% evaluatethe maximum conductionlossesofthe MODULATION diodeusethe following equations:
P=1.2xIF(AV)+ 0.066xIF2 (RMS)
STATIC ELECTRICAL CHARACTERISTICSOF THE MODULATION DIODE
RECOVERY CHARACTERISTICSOF THE DAMPER DIODE
DMV1500H
TURN-ON SWITCHING CHARACTERISTICSOF THE DAMPER DIODE
RECOVERY CHARACTERISTICSOF THE MODULATION DIODE
TURN-ON SWITCHING CHARACTERISTICSOF THE MODULATION DIODE
DMV1500H 2345 60.0
PF(av)(W)
Fig. 1-1: Power dissipation versus peak forward
current (triangular waveform,δ= 0.45) (damper
diode). 1 2345 60.0
PF(av)(W)
Fig. 1-2: Power dissipation versus peak forward
current (triangular waveform,δ= 0.45) (modula-
tion diode). 25 50 75 100 125 1500
IF(av)(A)
Fig. 2-1: Average forward current versus ambient
temperature (damper diode). 25 50 75 100 125 1500.0
IF(av)(A)
Fig. 2-2: Average forward current versus ambient
temperature (modulation diode).
IFM(A)
Fig. 3-1: Forward voltage drop versus forward
current (damper diode).
IFM(A)
Fig. 3-2: Forward voltage drop versus forward
current (modulation diode).
DMV1500H1E-3 1E-2 1E-1 1E+00.1
K=[Zth(j-c)/Rth(j-c)]
Fig.4: Relative variationof thermal impedance
junctionto case versus pulse duration.
1E-3 1E-2 1E-1 1E+00
IM(A)
Fig. 5-1: Non repetitive surge peak forward current
versus overload duration (damper diode).
1E-3 1E-2 1E-1 1E+00
IM(A)
Fig. 5-2: Non repetitive surge peak forward current
versus overload duration (modulation diode).
0.1 0.2 0.5 1.0 2.0 5.00
Qrr(nc)
Fig. 6-1: Reverse recovery charges versus dIF/dt
(damper diode).
0.1 1.0 10.0 100.00
Qrr(nC)
Fig. 6-2: Reverse recovery charges versus dIF/dt
(modulation diode).
0.1 0.2 0.5 1.0 2.0 5.00.0
IRM(A)
Fig. 7-1: Reverse recovery current versus dIF/dt
(damper diode).
DMV1500H 10 100 2000
IRM(A)
Fig. 7-2: Reverse recovery current versus dIF/dt
(modulation diode). 20 40 60 80 100 120 1400
VFP(V)
Fig. 8-1: Transient peak forward voltage versus
dIF/dt (damper diode). 20 40 60 80 100 120 140 160 180 2000
VFP(V)
Fig. 8-2: Transient peak forward voltage versus
dIF/dt (modulation diode). 20 40 60 80 100 120 140300
tfr(ns)
Fig. 9-1: Forward recovery time versus dIF/dt
(damper diode). 20 40 60 80 100 120 140 160 180 2000
tfr(ns)
Fig. 9-2: Forward recovery time versus dIF/dt
(modulation diode). 20 40 60 80 100 120 1400.0
VFP,IRM,Qrr[Tj]/VFP,IRM,Qrr[Tj=125°C]
Fig.10: Dynamic parameters versus junction tem-
perature (damper& modulation diodes).
