DM74S387N ,50 ns, (256 x 4) 1024-bit TTL PROMGeneral Description
This Schottky memory is organized in the popular 256
words by 4 bits config ..
DM74S40N ,Dual 4-Input NAND BufferGeneral DescriptionThis device contains two independent gates each of whichperforms the logic NAND ..
DM74S472AJ ,45 ns, (512 x 8) 4096-bit TTL PROMBlock Diagram
A7
M
M
A0
Al
4MB” ARRAY
M x M
MEMORY MAYRIX
DECDDER
A?
M
M
ml
..
DM74S472AN ,45 ns, (512 x 8) 4096-bit TTL PROMGeneral Description
This Schottky memory is organized in the popular 512
words by 8 bits config ..
DM74S472BN ,35 ns, (512 x 8) 4096-bit TTL PROMDM54S472/DM74S472
National
Semiconductor
DM54/ 743472
(512 x 8) 4096-Bit TTL PROM
DM74S472J ,60 ns, (512 x 8) 4096-bit TTL PROMGeneral Description
This Schottky memory is organized in the popular 512
words by 8 bits config ..
DS2505 ,16kb Add-Only Memoryapplications include storage of calibration constants, maintenance records, asset tracking, product ..
DS2505 ,16kb Add-Only MemoryFEATURES PIN ASSIGNMENT 16384 bits Electrically Programmable Read TSOC PACKAGE TO-92Only Memory ..
DS2505 ,16kb Add-Only Memoryblock diagram in Figure 1 shows the relationships between the major control and memory sections of ..
DS2505 ,16kb Add-Only Memory DS2505 16Kb Add-Only Memory
DS2505+ ,16Kb Add-Only Memoryblock diagram in Figure 1 shows the relationships between the major control and memory sections of ..
DS2505P ,16-kbit Add-Only Memoryblock diagram in Figure 1 shows the relationships between the major control and memory sections oft ..
DM74S387AN-DM74S387N
40 ns, (256 x 4) 1024-bit TTL PROM
DM545387/DM74S387
National
Semiconductor
DM54/74S387
(256 x 4) 1024-Bit TTL PROM
General Description
This Schottky memory is organized in the popular 256
words by 4 bits configuration. Memory enable inputs are
provided to control the output states. When the device is
enabled, the outputs represent the contents of the selected
word. When disabled, the 4 outputs go to the "OFF" or high
impedance state.
PROMs are shipped from the factory with lows in all loca-
tions. A high may be programmed into any selected location
by following the programming instructions.
Features
a Advanced titanium-tungsten (T i-W) fuses
u Strhottky-clarnpsd for high speed
Address ttttttess-down to 30 ns max
Enable access--20 ns max
Enable recovery-20 ns max
I: PNP inputs for reduced input loading
II All DC and AC parameters guaranteed over tempera-
n Low voltage TRl-SAFETM programming
a Open-collector outputs
Block Diagram
I(EbBlT ARMY
32 x 32
NEW!" MATRIX
TL/D/9188-1
am 03 02 m 00
Pin Names
AO-A? Addresses
tTi-Wi Output Enables
GND Ground
Q0-t23 Outputs
Vcc Power Supply
Connection Diagrams
Dual-In-Llne Package
115- 1 16 '-hir
As- 2 15 -A7
M- 3 14 -tT2
M-. 4 13 '-tTt
Ao-- 5 12 -00
Al- 6 11 --01
A2-- 7 10 -02
GND- 8 9 ~03
TL/D/9188-2
Top View
Order Number DM54/743387J, 387AJ,
DM745387N, 387AN
See NS Package Number MBA or N16A
Ordering Information
Plastlc Leaded Chip Carrier (PLCC)
Q Q 2 >8:
I I I I I
3 2 1 2019
A4-4 18-6t-
M-li Ir-trt
AO-G 16-00
Al-? 15 -NC
A2-8 14 -+
9 10 11 12 13
I I I I I
O ca to IO N
a: if = 0 O
TL/D/9168-3
TopVIew
Order Number DM74$387V, 387AV
See NS Package Number V20A
Commerclal Temp Range (tt'C to + 70°C)
Parameter/Order Number Max Access Time (na)
DM748387AJ 30
DM748387J 50
DM748387AN 30 f .
DM748387N 50
DM748387AV 30
DM74S387V 50
Mllltary Temp Range (
-55'C to + 125°C)
Parameter/Order Number Max Access Tlme (na)
DM548387AJ 40
DM54S387J 60
LBSSMWG/LSSSVSWO
DM54S387/DM74S387
Absolute Maximum Ratings (Note1)
Operating Conditions
If Mllltary/Aerospace speclfled devices are required, Mln Max Units
please contact the National Semiconductor Sales Supply Voltage (Vcc)
Office/Dlstrlbutors for avallabillty and apeelmtatlons Military 4.50 5.50 V
Supply Voltage (Note 2) -0.5V to + 7.0V Commercial 4.75 5.25 V
Input Voltage (Note 2) - 1.2V to + 5.5V Armin! Temperature (TA) 55 + 125 C
_ ll ary - tt
gutput Ite: (Note 2) 632V to +1555: Commercial 0 70 "C
Ltorjtg-e 1'.'1l'l,rl',trri',', 0 d _ to +300“: Logical "o" InputVoltage 0 0.8 V
ea emp.( oldtsring,1 sew" s) Logical "1" Input Voltage 2.0 5.5 v
ESD >2000V
DC Electrical Characteristics (Note 3)
Symbol Parameter Candltlons DM54S387 DM745387 Unlts
Min Typ Max Min Typ Max
IIL Input Load Current Vcc = Max, Vm = 0.45V -80 -250 -80 -250 “A
IIH Input Leakage Current VCC = Max, VIN = 2.7V 25 25 p.A
Vcc = Max, " = 5.5V 1.0 1.0 mA
VOL Low Level Output Voltage Vcc = Min, lor. = 16 mA 0.35 0.50 0.35 0.45
" (Note 4) Low Level Input Voltage 0.80 0.80
VlH (Note 4) High Level Input Voltage 2.0 2.0
loz Output Leakage Current Vcc = Max, VCEX =e 2.4V 50 50 PA
(Open-CollectorOnly) Vcc = Max, VCEX = 5.5V 100 100 WA
Vc InputCIamp Voltage Vcc = Min, IN = -18 mA -0.8 -1.2 -0.8 -1.2 V
C. Input Capacitance Vcc = 5.0V, VIN = 2.0V
TA = 25°C,1 MHz 4.0 4.0 .. pF
Co Output Capacitance VCC = 5.0V, vo = 2.0V 6 0 6 0 F
TA = 25°C, 1 MHz, Outputs Off . . p
ICC Power Supply Current Vcc = Max, Inputs Grounded 80 130 80 130 m A
All Outputs Open
Note 1: Absolute maximum ratings are those values beyond which the device may be permanently damaged. They do not mean that the device may be operated at
these values.
Note 2: These limits do not apply during programming. For the programming ratings, refer to the programming instructions.
Note 3: These limits apply over the entire operating range unless stated otherwise. All typical values are for Vcc = 5.0V and TA = +25'C.
Note 4.. These are absolute voltages with respect to pin 8 on the device and include all overshoots due to system and/or tester noise. Do not attempt to test these
values without suitable equipment.
AC Electrical Characteristics with Standard Load and Operating Conditions
COMMERCIAL TEMP RANGE (0°C to + 70°C)
Symbol Parameter JEDEC Symbol DM74S387 DM74S387A Units
Min Typ Max Min Typ Max
TAA Address Access Time TAVQV 35 50 20 30 ns
TEA Enable Access Time TEVQV 15 25 15 20 ns
TER Enable Recovery Time TEXQX 15 25 15 20 ns
TZX Output Enable Time TEVQX 15 25 15 20 ns
TXZ Output Disable Time TEXQZ 15 25 15 20 ns
MILITARY TEMP RANGE i- 55'C to + 125°C)
Symbol Parameter JEDEC Symbol DM54S387 DM54S387A Units
Min Typ Max Min Typ Max
TAA Address Access Time TAVQV 35 60 20 40 ns
TEA Enable Access Time TEVQV 15 30 15 30 ns
TER Enable Recovery Time TEXQX 15 30 15 30 ns
TZX Output Enable Time TEVQX 15 30 15 30 ns
TXZ Output Disable Time TEXOZ 15 30 15 30 ns
Functional Description
TESTABILITY
The Schottky PROM die includes extra rows and columns of
tusable links for testing the programmability of each chip.
These test fuses are placed at the worst-case chip locations
to provide the highest possible confidence in the program-
ming tests in the final product. A ROM pattern is also per-
manently fixed in the additional circuitry and coded to pro-
vide a parity check of input address levels. These and other
test circuits are used to test for correct operation of the row
and column-select circuits and functionality of input and en-
able gates. All test circuits are available at both wafer and
assembled device levels to allow 100% functional and para-
metric testing at every stage of the test flow.
RELIABILITY
As with all National products, the Ti-W PROMs are subject-
ed to an on-going reliability evaluation by the Reliability As-
surance Department. These evaluations employ accelerat-
ed lite tests, including dynamic high-temperature operating
life, temperature-humidity lite, temperature cycling, and ther-
mal shock. To date, nearly 7.4 million Schottky Ti-W PROM
device hours have been logged, with samples in Epoxy B
molded DIP (N-package), PLCC (V-package) and CEFlDlP
(J-package). Device performance in all package configura-
tions is excellent.
TlTANlUM-TUNGSTEN FUSES
National's Programmable Read-Only Memories (PROMs)
feature titanium-tungsten (T i-W) fuse links designed to pro-
gram efficiently with only 10.5V applied. The high perform-
ance and reliability of these PROMs are the result of fabrica-
tion by a Schottky bipolar process, of which the titanium-
tungsten metallization is an integral part, and the use of an
on-chip programming circuit.
A major advantage of the titanium-tungsten fuse technology
is the low programming voltage of the fuse links. At 10.5V,
this virtually eliminates the need for guard-ring devices and
wide spacings required for other fuse technologies. Care is
taken, however, to minimize voltage drops across the die
and to reduce parasitics. The device is designed to ensure
that worst-case fuse operating current is low enough for
reliable Iong-term operation. The Darlington programming
circuit is liberally designed to insure adequate power density
for blowing the fuse links. The complete circuit design is
optimized to provide high performance over the entire oper-
ating ranges of V00 and temperature.
£8€SV£WGILSSSVSWCI
This datasheet has been :
www.ic-phoenix.com
Datasheets for electronic components.
National Semiconductor was acquired by Texas Instruments.
corp/docs/irwestor_relations/Pr_09_23_201 1_national_semiconductor.html
This file is the datasheet for the following electronic components:
DM74S387AV - product/dm745387av?HQS=T|-null-nulI-dscatalog-df-pf-null-wwe
DM74S387N - product/dm74s387n?HQS=T|-nu|I-nulI-dscatalog-df-pf-nuIl-wwe
DM74S387V - product/dm74s387v?HQS=T|-nu|I-nuIl-dscatalog-df-pf-nulI-wwe
DM74S387AN - product/dm743387an?HQS=TI-nu|I-null-dscatalog-df—pf-nuII-wwe
DM74S387AJ - product/dm743387aj?HQS=TI-null-nulI-dscatalog-df-pf—nuII-wwe
DM54S387J - product/dm54s387j?HQS=T|-nulI-nulI-dscatalog-df—pf—nuII-wwe
DM54S387AJ - product/dm54s387aj?HQS=T|—nulI-null-dscatalog-df—pf—nuII-wwe
DM74S387J - product/dm74s387j?HQS=T|-nu|I-nulI—dscatalog-df—pf—nuII-wwe
