DM54S288AJ ,35 ns, (32 x 8) 256-bit TTL PROMBlock Diagram
M _
" man man
" 3t l 8
"EMMY MATRIX
E _,e-i-jj,li-,,el I rr,fi)-jj-i,l,)
..
DM54S288AJ ,35 ns, (32 x 8) 256-bit TTL PROMDM54SZ88/DM 748288
National
Semiconductor
DM54/ 748288 (32 x 8)
256-Bit TTL PROM
DM54S288J ,45 ns, (32 x 8) 256-bit TTL PROMFeatures
This Schottky memory is organized in the popular 32 words I Advanced titanium-tungsten ..
DM54S288J ,45 ns, (32 x 8) 256-bit TTL PROMBlock Diagram
M _
" man man
" 3t l 8
"EMMY MATRIX
E _,e-i-jj,li-,,el I rr,fi)-jj-i,l,)
..
DM54S373J ,7 V, TRI-STATE octal D-type transparent latch and edge-triggered flip-flopElectrical Characteristics"
. . table are not guaranteed at the absolute maximum ratings.
Operati ..
DM54S472 , (512 x 8) 4096-Bit TTL PROM
DS1687-3 ,3V/5V Real-Time ClocksFeatures Such as: Y2K Compliant RAM Clear Input +3V or +5V Operation Century Register ..
DS1687-3+ ,3V/5V Real-Time ClockDS1685/DS16873V/5V Real-Time Clock
DS1687-3IND+ ,3V/5V Real-Time Clockfeatures including a silicon serial number, power-on/off control circuitry, 242 bytes of user NVSRA ..
DS1687-5 ,3V/5V Real-Time ClocksFEATURES Incorporates Industry-Standard DS1287 PC Clock plus Enhanced
DS1687-5. ,3V/5V Real-Time ClocksFEATURES Incorporates Industry-Standard DS1287 PC Clock plus Enhanced
DS1687-5+ ,3V/5V Real-Time Clockfeatures including a silicon serial number, power-on/off control circuitry, 242 bytes of user NVSRA ..
DM54S288AJ-DM54S288J
35 ns, (32 x 8) 256-bit TTL PROM
DM54S288/DM745288
National
Semiconductor
DM54/74S288 (32 It 8)
256-Bit TTL PROM
General Description
This Schottky memory is organized in the popular 32 words ll Advanced titanium-tungsten (Ti-W) fuses
by 8 bits configuration. A memory enable input is provided I: Schottky-clamped for high speed
to control the output states. When the device is enabled, the
outputs represent the contents of the selected word. When
disabled, the 8 outputs go to the "OFF" or high impedance
state.
Features
Address access down to-25 ns max
Enable aCCess--20 ns max
Enable "movery--20 ns max
" PNP inputs for reduced input loading
PROMs are shipped from the factory with lows in all Ioca- I: All DC and AC parameters guaranteed over
tions. A high may be programmed into any selected location temperature
by following the programming instructions.
a Low voltage TFII-SAFETM programming
II TRI-STATE® Outputs
Block Diagram
'dr l- e} "IM"'
iu - mummy mmx
m“ I I I I I I’ I
a " - - - _
" w; w BUF m " " wr
Emu I I I I I I I I
IhlFFE8 m as as M " 02 m on
TL/D/8360-t
Pin Names
AO-M Addresses
G Enable
GND Ground
OO-O? Outputs
Vcc Power Supply
Connection Diagrams
Dual-ln-Llne Package
00- 1 16 --vcc
tll - 2 15 .-t5
tle-- 3 14 -A4
Q3- 4 13 -A3
tu-- 5 12 -A2
05- 6 11 -Al
06- 7 10 -ho
GND- 8 ' -07
TL/D/8360-2
Top View
Order Number DM54/748288J, 288Ad or
DM748288N, 288AN
See NS Package Number J16A or N16A
Ordering Information
Plastic Leaded Chlp Carrier (PLCC)
T, 8 'sl >8":
I I l l l
3 2 1 20 19
or- 4 18 -A4
03- 5 17 -A3
NC- 6 16 -Nc
04- 7 15 -A2
05- 8 14 -A1
9 10 11 12 13
l l l l I
to ea U N Ct
o i5 = O <
TL/D/8360-7
Toleew
Order Number DM748288V or 288AV
See NS Package Number V20A
Commercial Temp Range (tPC to + 70°C)
Parameter/Order Number
Max Access Tlme (ns) _
DM748288N 35
DM74S2880 35
DM74S288V 35
DM748288AN 25
DM74S288AJ 25
DM74S288AV 25
Mllltary Temp Range (- 55°C to + 125°C)
Parameter/Order Number
Max Access Time (ns)
DM543288J
DM 548288AJ
eszsvzwa/ 893879110
DM54S288/DM745288
Absolute Maximum Ratings (Note 1)
Operating Conditions
If Mllltary/Aerospace specified devlces are required, Mln Max Unlts
please contact the National Semlconductor Sales Supply Voltage (Vcc)
Offltte/DItgtrlttutttrtt for availability and speclflcatlons. Military 4.50 5.50 V
Supply Voltage (Note 2) -0.5V to + 7.0V Commercial 4.75 5.25 V
Input Voltage (Note 2) - 1.2V to + 5.5V Amem Temperature (T A) 55 + 125 c
- iitary - .
:tutput V:ltage (Note 2) 6500.31] to+::05: Commercial 0 + 70 "C
L C,",",' C,',:,',',','::;,' Id . 10 0 300°C Logical "o" lnputVoltago 0 0.6 V
ea empera ure( 0 enng. sec.) Logical "1" InputVoltege 2.0 5.5 V
ESD rating to be determined
DC Electrical Characteristics (Note 3)
Symbol Parameter Conditions DM54S288 DM748288 Units
Mln Typ Max Min Typ Max
IIL Input Load Current VCC = Max, " = 0.45V -80 -250 -80 -250 p.A
IIH Input Leakage Current Vcc = Max, VIN = 2.7V 25 25 HA
vcc = Max, VIN = 5.5V 1.0 1.0 mA
VOL Low Level Output Voltage VCC = Min, IOL = 16 mA 0.35 0.50 0.35 0.45 V
" (Note 4) Low Level input Voltage 0.80 0.80 V
VIH (Note 4) High Level Input Voltage 2.0 2.0 V
Vc InputClamp Voltage Vcc = Min, IN = -18 mA -0.8 -1.2 -0.8 -1.2 V
C. InputCapacitance Vcc = 5.0, " = 2.0V
TA = 25°c,1 MHz 4.0 4,0 pF
Co Output Capacitance VCC = 5.0V, vo = 2.0V "
TA = 25''C,1 MHz, Outputs Off 6.0 6.0 pF
ICC PowerSupply Current Vcc = Max, InputGrounded 70 110 70 1 10 m A
All Outputs Open
los Short Circuit vo = 0V, Vcc = Max _ _ _ -
Output Current (Note 5) 20 70 20 70 mA
loz Output Leakage Vcc = Max, Vo = 0.45V to 2.4V +50 +50 p.A
(TRI-STATE) Chip Disabled _ 50 _ 50 p A
VOH Output Voltage High IOH = -2.0 mA 2.4 3.2 V
lore = -6.5 mA 2.4 3.2 V
Note 1: Absolute maximum ratings are those values beyond which the device may be permanently damaged. They do not mean that the device may be operated at
these values.
Note 2: These limits do not apply during programming. For the programming ratings, refer to the programming instructions.
Note & These limits apply over the entire operating range unless stated otherwise. All typical values are for Vcc = 5.0V and TA = 25''C.
Note 4: These are absolute voltages with respect to pin 8 on the device and include all overshoots due to system and/or tester noise. Do not attempt to test these
values without suitable equipment,
Note 5: During los measurement. only one output at a time should be grounded. Permanent damage may otherwise result.
AC Electrical Characteristics with Standard Load and Operating Conditions
COMMERCIAL TEMPERATURE RANGE (0°C to + 70°C)
Symbol Parameter :EDEC DM745288 DM748288A Units
ymbol Min Typ Max Min Typ Max
TAA Address Access Time TAVQV 22 35 17 25 ns
TEA Enable Access Time TEVQV 15 20 15 20 ns
TER Enable Recovery Time TEXQX 15 25 15 20 ns
TZX Output Enable Time TEVQX 15 25 15 20 ns
TXZ Output Disable Time TEXQZ 15 25 15 20 ns
MILITARY TEMPERATURE RANGE (-55''C to + 125''C)
Symbol $5352] Parameter DM54S288 DM54S288A Units
Mln Typ Max Min Typ Max
TAA TAVQV Address Access Time 22 45 17 35 ns
TEA TEVQV Enable Access Time 15 30 15 30 ns
TER TEXQX Enable Recovery Time 15 35 15 30 ns
TZX TEVQZ Output Enable Time 15 30 15 30 ns
TXZ TEXQZ Output Disable Time 15 35 15 30 ns
Functional Description
TESTABILITY
The Schottky PROM die includes extra rows and columns of
fusable links for testing the programmability of each chip.
These test fuses are placed at the worst-case chip locations
to provide the highest possible confidence in the program-
ming tests in the final product. A ROM pattern is also per-
manently fixed in the additional circuitry and coded to pro-
vide a parity check of input address levels. These and other
test circuits are used to test for correct operation of the row
and column-select circuits and functionality of input and en-
able gates. All test circuits are available at both water and
assembled device levels to allow 100% functional and para-
metric testing at every stage of the test flow.
RELIABILITY
As with all National products, the Ti-W PROMs are subject-
ed to an on-golng reliability evaluation by the Reliability As-
surance Department, These evaluations employ accelerat-
ed life tests, including dynamic high-temperature operating
life, temperature-humidity life, temperature cycling, and ther-
mal shock. To date, nearly 7.4 million Schottky Ti-w PROM
device hours have been logged, with samples in Epoxy B
molded DIP (N-package), PLCC (V-package) and CERDIP
(J-package). Device performance in all package configure
tions is excellent.
TlTANIUM-TUNGSTEN FUSES
National's Programmable Read-Only Memories (EROMs)
feature titanium-tungsten (Ti-W) fuse links designed to pro-
gram efficiently with only 10.5V applied. The high perform-
ance and reliability of these PROMs are the result of fabrica-
tion by a Schottky bipolar process, of which the titanium-
tungsten metalization is an integral part, and the use of an
on-chip programming circuit.
A major advantage of the titanium-tungsten fuse technology
is the low programming voltage of the fuse links. At 10.5V,
this virtually eliminates the need for guard-ring devices and
wide spacings required for other fuse technologies. Care is
taken, however, to minimize voltage drops across the die
and to reduce parasites. The device is designed to ensure
that worst-case fuse operating current is low enough for
reliable long-term operation. The Darlington programming
circuit is liberally designed to insure adequate power density
for blowing the fuse links. The complete circuit design is
optimized to provide high performance over the entire oper-
ating ranges of Vcc and temperature.
QBZSHWG/QBZSVSWG
This datasheet has been :
www.ic-phoenix.com
Datasheets for electronic components.
National Semiconductor was acquired by Texas Instruments.
corp/docs/irwestor_relations/Pr_09_23_201 1_national_semiconductor.html
This file is the datasheet for the following electronic components:
DM54S288J - product/dm545288j?HQS=T|-nu|I-nulI-dscatalog-df-pf-nuII-wwe
DM54S288AJ - productldm543288aj?HQS=T|—nul|-null-dscatalog-df—pf—nuII-wwe
