DG413DY-T ,Improved, Quad, SPST Analog SwitchesFeaturesgle-throw (SPST) analog switches. The DG411 is nor-♦♦ Low R (35Ω max)DS(ON)mally closed (NC ..
DG413DY-T1 , Precision Monolithic Quad SPST CMOS Analog Switches
DG413EUE ,Improved, Quad, SPST Analog SwitchesFeaturesgle-throw (SPST) analog switches. The DG411 is nor-♦♦ Low R (35Ω max)DS(ON)mally closed (NC ..
DG413EUE+ ,Improved, Quad, SPST Analog SwitchesFeatures♦ ♦ Plug-In Upgrade for Industry-StandardMaxim’s redesigned DG411/DG412/DG413 analogDG411/D ..
DG413FDY+ ,Quad, Rail-to-Rail, Fault-Protected, SPST Analog Switches
DG413LDY-T1 , Precision Monolithic Quad SPST Low-Voltage CMOS Analog Switches
DRR3116 , Subminiature Rotary Coded Switches
DRS3016 , Subminiature Rotary Coded Switches
DRS-3016 , Subminiature Rotary Coded Switches
DRS3116 , Subminiature Rotary Coded Switches
DRS3116 , Subminiature Rotary Coded Switches
DRS-3116 , Subminiature Rotary Coded Switches
DG411CY+-DG411DY+-DG411DY-T-DG412CUE+-DG412CY+-DG412DY+-DG412DY+T-DG412DY-T-DG413CY+-DG413CY+T-DG413DY+-DG413DY+T-DG413DY-T-DG413EUE-DG413EUE+
Improved, Quad, SPST Analog Switches
General DescriptionMaxim’s redesigned DG411/DG412/DG413 analog
switches now feature low on-resistance matching
between switches (3Ωmax) and guaranteed on-resis-
tance flatness over the signal range (Δ4Ωmax). These
low on-resistance switches conduct equally well in
either direction. They guarantee low charge injection,
low power consumption, and an ESD tolerance of
2000V minimum per Method 3015.7. The new design
offers lower off-leakage current over temperature (less
than 5nA at +85°C).
The DG411/DG412/DG413 are quad, single-pole/sin-
gle-throw (SPST) analog switches. The DG411 is nor-
mally closed (NC), and the DG412 is normally open
(NO). The DG413 has two NC switches and two NO
switches. Switching times are less than 150ns max for
tONand less than 100ns max for tOFF. These devices
operate from a single +10V to +30V supply, or bipolar
±4.5V to ±20V supplies. Maxim’s improved
DG411/DG412/DG413 are fabricated with a 44V silicon-
gate process.
________________________ApplicationsSample-and-Hold CircuitsCommunication Systems
Test EquipmentBattery-Operated Systems
Heads-Up DisplaysPBX, PABX
Guidance & Control SystemsAudio Signal Routing
Military Radios
______________________New Features♦
Plug-In Upgrade for Industry-Standard
DG411/DG412/DG413♦
Improved RDS(ON)Match Between Channels
(3Ωmax)♦
Guaranteed RFLAT(ON)Over Signal Range (Δ4Ω)♦
Improved Charge Injection (10pC max)♦
Improved Off-Leakage Current Over Temperature
(< 5nA at +85°C) ♦
Withstand Electrostatic Discharge (2000V min)
per Method 3015.7
__________________Existing Features♦
Low RDS(ON)(35Ωmax)♦
Single-Supply Operation +10V to +30V♦
Bipolar-Supply Operation ±4.5V to ±20V♦
Low Power Consumption (35µW max)♦
Rail-to-Rail Signal Handling♦
TTL/CMOS-Logic Compatible
Ordering Information
DG411/DG412/DG413
Improved, Quad,
SPST Analog SwitchesSWITCHES SHOWN FOR LOGIC “0” INPUT
DIP/SO/TSSOPDG412
LOGICSWITCH
OFF
TOP VIEW
DIP/SO/TSSOPDG411
LOGICSWITCH
OFF
DIP/SO/TSSOPDG413
LOGICSWITCHES
1, 4
OFF
SWITCHES
2, 3
OFF
IN2V-
IN1
DG413VL
IN3IN4
GND
IN2V-
IN1
DG411VL
IN3IN4
GND
IN2 V-
IN1
DG412VL
IN3IN4
GND
Pin Configurations/Functional Diagrams/Truth Tables19-4728; Rev 7; 9/08
Ordering Information continued at end of data sheet.†Contact factory for dice specifications.
Pin Configurations and Functional Diagrams continued at end of data sheet.
PARTTEMP RANGEPIN-PACKAGE
DG411CJ0°C to +70°C16 Plastic DIP
DG411CUE0°C to +70°C16 TSSOP
DG411EUE-40°C to +85°C16 TSSOP
DG411CY0°C to +70°C16 Narrow SO
DG411C/D0°C to +70°CDice†
DG411/DG412/DG413
Improved, Quad,
SPST Analog Switches
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS—Dual Supplies(V+ = 15V, V- = -15V, VL= 5V, VGND= 0V, VINH= 2.4V, VINL= 0.8V, TA= TMINto TMAX, unless otherwise noted.)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
Note 1:Signals on S, D, or IN exceeding V+ or V- are clamped by internal diodes. Limit forward current to maximum
current rating.
(All Voltages Referenced to V-.)
V+.........................................................................................44V
GND.....................................................................................25V.....................................................(GND -0.3V) to (V+ +0.3V)
Digital Inputs, VS, VD(Note 1)........(V- -2V) to (V+ +2V) or 30mA
(whichever occurs first)
Continuous Current (any terminal)......................................30mA
Peak Current
(pulsed at 1ms, 10% duty cycle max)............................100mA
Continuous Power Dissipation (TA= +70°C)
16-Pin Plastic DIP (derate 10.53mW/°C above +70°C).842mW
16-Pin Narrow SO (derate 8.70mW/°C above +70°C)...696mW
16-Pin CERDIP (derate 10.00mW/°C above +70°C)......800mW
16-Pin TSSOP (derate 6.7mW/°C above +70°C)...........457mW
16-Pin QFN (derate 19.2mW/°C above +70°C)...........1538mW
Operating Temperature Ranges
DG41_C_..............................................................0°C to +70°C
DG41_D_...........................................................-40°C to +85°C
DG41_AK_.......................................................-55°C to +125°C
Storage Temperature Range.............................-65°C to +150°C
Lead Temperature (soldering, 10s).................................+300°C30A
C, D
-0.25-0.100.25= TMINto TMAX= TMINto TMAX
C, D
C, D
C, D= TMINto TMAX= +25°C= TMINto
TMAX= +25°C= TMINto
TMAX= +25°C= TMINto
TMAX= +25°C= +25°C= +25°C
V+ = 16.5V,
V- = -16.5V,= ±15.5V,= ±15.5V
V+ = 16.5V,
V- = -16.5V,= ±15.5V,
VS= ±15.5V
(Note 3)
V+ = 16.5V,
V- = -16.5V,= ±15.5V,
VS= ±15.5V
V+ = 15V, V- = -15V,= ±10V,= -10mA
V+ = 13.5V,
V- = -13.5V,= ±8.5V,= -10mA
V+ = 15V, V- = -15V,= ±5V, 0V,= -10mA
CONDITIONS-2020
ID(ON)
IS(ON)
Drain On-Leakage Current
(Note 7)
ID(OFF)nA-55Drain Off-Leakage Current
(Note 7)5nAIS(OFF)Source Off-Leakage Current
(Note 7)
RFLAT(ON)On-Resistance Flatness
(Note 4)-1515VANALOGAnalog Signal Range
ΔRDS(ON)
On-Resistance
Match Between Channels
(Note 4)45
RDS(ON)Drain-Source
On-Resistance
UNITSMINTYPMAX(Note 2)SYMBOLPARAMETERC, D, A
C, D, A
C, D, A
SWITCH
IN = 2.4V, all others = 0.8V
DG411/DG412/DG413
Improved, Quad,
SPST Analog Switches
ELECTRICAL CHARACTERISTICS—Dual Supplies (continued)(V+ = 15V, V- = -15V, VL= 5V, VGND= 0V, VINH= 2.4V, VINL= 0.8V, TA= TMINto TMAX, unless otherwise noted.)5TA= TMINto TMAX5TA= TMINto TMAX= +25°C5TA= TMINto TMAX5TA= TMINto TMAX= +25°C= +25°C= +25°C= +25°C= +25°C= +25°C= +25°C= TMINto TMAX= +25°C= TMINto TMAX= +25°C= +25°C
IN = 0.8V, all others = 2.4V= +25°C
CONDITIONS= +25°C-0.00011
All channels on or off,
V+ = 16.5V,
V- = -16.5V,
VIN= 0V or 5V
All channels on or off,
V+ = 16.5V,
V- = -16.5V,
VIN= 0V or 5V
All channels on or off,
V+ = 16.5V,
V- = -16.5V,
VIN= 0V or 5V35f = 1MHz, Figure 8CD(ON) +Drain On-Capacitance9f = 1MHz, Figure 7CD(OFF)Drain Off-Capacitance9f = 1MHz, Figure 7CS(OFF)Source Off-Capacitance85= 50Ω,= 5pF,
f = 1MHz, Figure 6
Crosstalk (Note 6)68= 50Ω,= 5pF,
f = 1MHz, Figure 5
OIRROff-Isolation (Note 5)510= 1.0nF,
VGEN= 0V,
RGEN= 0Ω, Figure 4Charge Injection (Note 3)25
DG413 only, = 300Ω, = 35pF,Figure 3Break-Before-Make Time Delay= ±10V,
Figure 2= ±10V,
Figure 2
160tOFFTurn-Off Time100145
220tONTurn-On Time-0.5000.0050.500IINH
Input Current with Input Voltage
High-0.00011IGNDGround Current0.00011Logic Supply Current0.00011Positive Supply Current
-0.5000.0050.500IINLInput Current with Input Voltage
Low
All channels on or off,
V+ = 16.5V,
V- = -16.5V,
VIN= 0V or 5VNegative Supply Current
±4.5±20.0Power-Supply Range
UNITSMINTYPMAX
(Note 2)SYMBOLPARAMETER
INPUT
SUPPLY
DYNAMIC
DG411/DG412/DG413
Improved, Quad,
SPST Analog Switches
ELECTRICAL CHARACTERISTICS—Single Supply(V+ = 12V, V- = 0V, VL= 5V, VGND= 0V, VINH= 2.4V, VINL= 0.8V, TA= TMINto TMAX, unless otherwise noted.)
Note 2:The algebraic convention, where the most negative value is a minimum and the most positive value a maximum, is used in
this data sheet.
Note 3:Guaranteed by design.
Note 4:ΔRON= ΔRONmax - ΔRONmin. On-resistance match between channels and flatness are guaranteed only with
bipolar-supply operation. Flatness is defined as the difference between the maximum and minimum value of on-resistance
as measured at the extremes of the specified analog signal range.
Note 5:Off-Isolation = 20log(VD/VS), VD= output, VS= input to off switch. See Figure 5.
Note 6:Between any two switches. See Figure 6.
Note 7:Leakage parameters IS(OFF), ID(OFF), and ID(ON)are 100% tested at the maximum-rated hot temperature and guaranteed
by correlation at +25°C.5= +25°C= TMAX5TA= TMAX5TA= TMAX
315TA= TMINto TMAX5TA= TMAX= +25°C= +25°C= TMINto TMAX= +25°C= +25°C= +25°C= +25°C= +25°C= +25°C= TMINto TMAX
CONDITIONS510= 1.0nF,
VGEN= 0V,
RGEN= 0V,
Figure 4Charge Injection
(Note 3)25
DG413 only,= 300Ω, CL= 35pF,
Figure 3Break-Before-Make Time Delay= 8V,
Figure 2= 8V,
Figure 2
All channels on or off,= 5.25V,
VIN= 0V or 5V
All channels on or off,
V+ = 13.2V,
VIN= 0V or 5V
All channels on or off,= 5.25V,
VIN= 0V or 5V
All channels on or off,
V+ = 13.2V,
VIN= 0V or 5V
V+ = 10.8V,= 3.8V,= -10mA140tOFFTurn-Off Time80125
tONns175250012VANALOG
Turn-On Time-0.00011
IGND
Analog Signal Range
Ground Current0.00011Negative Supply Current0.000110.00011Positive Supply Current
Logic Supply Current
RDS(ON)Drain-Source On-Resistance
UNITSMINTYPMAX
(Note 2)SYMBOLPARAMETER
SWITCH
SUPPLY
DYNAMIC(Note 3)
DG411/DG412/DG413
Improved, Quad,
SPST Analog SwitchesON-RESISTANCE vs. VD AND
POWER-SUPPLY VOLTAGE
DG411-01
VD (V)
DS(ON)
020C
A: V+ = 5V,
V- = -5V
B: V+ = 10V,
V- = -10V
C: V+ = 15V,
V- = -15V
D: V+ = 20V,
V- = -20V
ON-RESISTANCE vs. VD AND
TEMPERATURE
DG411-02
VD (V)
DS(ON)
V+ = 15V
V- = -15V
TA = +125°C
TA = +85°C
TA = +25°C
TA = -55°C15
ON-RESISTANCE vs. VD AND
TEMPERATURE (SINGLE SUPPLY)DG411-03
VD (V)
DS(ON) 20
V- = 0V
V+ = 5V
V+ = 10V
V+ = 15V
V+ = 20V
ON-RESISTANCE vs. VD
(SINGLE SUPPLY)
DG411-04
VD (V)
DS(ON) 20
V+ = 12V
V- = 0V
TA = +125°C
TA = +85°C
TA = +25°C
OFF-LEAKAGE CURRENTS vs.
TEMPERATURE
DG411-05
TEMPERATURE (°C)
OFF-LEAKAGE (nA)
+25+125
V+ = 16.5V
V- = -16.5V
VD = ±15V
VS = ±15V
ON-LEAKAGE CURRENTS vs.
TEMPERATURE
DG411-06
TEMPERATURE (°C)
ON-LEAKAGE (nA)
+25+125
V+ = 16.5V
V- = -16.5V
VD = ±15V
VS = ±15V
__________________________________________Typical Operating Characteristics(TA = +25°C, unless otherwise noted.)
CHARGE INJECTION vs.
ANALOG VOLTAGE
DG411-07
VD (V)
Q (pC)
V+ = 15V
V- = -15V
VL = 5V
CL = 1nF
SUPPLY CURRENT vs. TEMPERATURE
DG411-08
TEMPERATURE (°C)
I+, I-, I
+25+125
A: I+ at V+ = 16.5V
B: I- at V- = -16.5V
C: IL at VL = 5V
DG411/DG412/DG413
Improved, Quad,
SPST Analog Switches
__________Applications Information
Operation with Supply Voltages
Other Than 15VUsing supply voltages other than 15V will reduce the
analog signal range. The DG411/DG412/DG413 switch-
es operate with ±4.5V to ±20V bipolar supplies or with
a +10V to +30V single supply; connect V- to 0V when
operating with a single supply. Also, all device types
can operate with unbalanced supplies such as +24V
and -5V. VLmust be connected to +5V to be TTL com-
patible, or to V+ for CMOS-logic level inputs. The
Typical Operating Characteristicsgraphs show typical
on-resistance with ±15V, ±10V, and ±5V supplies.
(Switching times increase by a factor of two or more for
operation at ±5V.)
Overvoltage Protection Proper power-supply sequencing is recommended for
all CMOS devices. Do not exceed the absolute maxi-
mum ratings because stresses beyond the listed rat-
ings may cause permanent damage to the devices.
Always sequence V+ on first, followed by VL, V-, and
logic inputs. If power-supply sequencing is not possi-
ble, add two small, external signal diodes in series with
supply pins for overvoltage protection (Figure 1).
Adding diodes reduces the analog signal range to 1V
below V+ and 1V below V-, without affecting low switch
resistance and low leakage characteristics. Device
operation is unchanged, and the difference between
V+ and V- should not exceed +44V.g
Figure 1. Overvoltage Protection Using External Blocking Diodes
Pin Description
PIN
DIP/SO/TSSOPQFNNAMEFUNCTION1, 16, 9, 815, 14, 7, 6IN1–IN4Input
2, 15, 10, 716, 13, 8, 5D1–D4Analog Switch Drain Terminal
3, 14, 11, 61, 12, 9, 4S1–S4Analog Switch Source Terminal2V-Negative-Supply Voltage Input3GNDGround10VLLogic Supply Voltage11V+Positive-Supply Voltage Input—Connected to Substrate—EPExposed Paddle (QFN Only). Connect EP to V+.
