DF5A6.8CJE ,ESD protection diode (low capacitance type)Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max UnitZener ..
DF5A6.8F ,Diodes for Protecting Against ESDDF5A6.8F TOSHIBA Diodes for Protecting Against ESD Epitaxial Planar Type DF5A6.8F Diodes for Prote ..
DF5A6.8FU ,Diodes for Protecting Against ESDDF5A6.8FU TOSHIBA Diodes for Protecting Against ESD Epitaxial Planar Type DF5A6.8FU Diodes for Pro ..
DF5A6.8JE ,ESD protection diode (standard type)Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max UnitZener ..
DF5A6.8LF ,Diodes for Protecting Against ESDDF5A6.8LF TOSHIBA Diodes For Protecting Against ESD Epitaxial Planar Type DF5A6.8LF Diodes for ..
DF5A6.8LFU ,Diodes for Protecting Against ESDDF5A6.8LFU TOSHIBA Diodes For Protecting Against ESD Epitaxial Planar Type DF5A6.8LFU Diodes fo ..
DP83256VF ,PLAYERa+⑩ Device (FDDI Physical Layer Controller)FUNCTIONAL DESCRIPTION(CTSCR)3.1 Clock Recovery Module5.29 Receive Condition Comparison Register A ..
DP83256VF-AP ,PLAYERa+⑩ Device (FDDI Physical Layer Controller)features of the DP83231TM TMCRD The DP83266 Media Access Controller and System Inter-Clock Recovery ..
DP83256VF-AP ,PLAYERa+⑩ Device (FDDI Physical Layer Controller)aDP83256/56-AP/57PLAYER Device(FDDIPhysicalLayerController)PRELIMINARYOctober1994DP83256/56-AP/57TM ..
DP83257VF ,PLAYERa+⑩ Device (FDDI Physical Layer Controller)Pin Descriptions5.16 Current Noise Count Register (CNCR)5.17 Current Noise Prescale Count Register ..
DP83257VF-MPC ,Player & Device Enhanced FDDI Physical Layer Controller [Preliminary]Features Elasticity Buffer, Repeat Filter, and SmootherYY Line state detector/generatorSingle chip ..
DP83266VF ,MACSITM Device (FDDI Media Access Controller and System Interface)FUNCTIONAL DESCRIPTION (SERVICE ENGINE)2.10 Self Testing6.1 Overview2.11 32-Bit Address/Data Path t ..
DF5A6.8CJE
ESD protection diode (low capacitance type)
DF5A6.8CJE
TOSHIBA Diodes for Protecting against ESD
DF5A6.8CJE Product for Use Only as Protection against Electrostatic
Discharge (ESD) This product is for protection against electrostatic discharge (ESD) only
and is not intended for any other usage, including without limitation,
the constant voltage diode application. The mounting of four devices on an ultra-compact package allows
the number of parts and the mounting cost to be reduced. Low Terminal capacitance (between Cathode and Anode)
: CT =23pF (typ.)
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Guaranteed Level of ESD Immunity Criterion: No damage to device elements
Unit: mm
Weight: 0.003 g (typ.)
