DF3A6.8FV ,ESD protection diode (standard type)Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. MaxUnitZener ..
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DF3A6.8LFV ,ESD protection diode (low capacitance type)Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max UnitZener ..
DF3A6.8UFU ,ESD protection diode (standard type)Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition MinTyp. Max UnitRevers ..
DF3A8.2FE , Product for Use Only as Protection against Electrostatic Discharge (ESD)
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DP8303AN , 8-Bit TRI-STATE-R Bidirectional Transceiver (Inverting)
DF3A6.8FV
ESD protection diode (standard type)
DF3A6.8FV TOSHIBA Diodes for Protecting against ESD
DF3A6.8FV Product for Use Only as Protection against Electrostatic
Discharge (ESD) This product is for protection against electrostatic discharge (ESD)
only and is not intended for any other usage, including without
limitation, the constant voltage diode application. Because two devices are mounted on an ultra compact package, it is
possible to allow reducing the number of the parts and the mounting
cost.
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mmt)
Electrical Characteristics (Ta = 25°C) Unit: mm
Weight: 0.0015 g (typ.)
