DF10M ,Single-Phase Bridge Rectifiers
DF10M ,Single-Phase Bridge RectifiersBulletin U2788 rev. G 04/03DF SERIES1A Single Phase D.I.L. Rectifier Bridge
DF10S ,SINGLE PHASE GLASS PASSIVATED SURFACE MOUNT BRIDGE RECTIFIER Voltage: 50 TO 1000V CURRENT:1.0AThermal Characteristics (T = 25°C unless otherwise noted)AParameter Symbol DF005S DF01S DF02S DF04S ..
DF10SA-E3 , Packaging Information
DF10SC6 , Schottky Rectifiers (SBD) (60V 10A)
DF10SC9 , Schottky Rectifiers (SBD) (90V 10A)
DO3316P-682MLD , SMT Power Inductors - DO3316P Series
DO3316P-682MLD , SMT Power Inductors - DO3316P Series
DO3316P-683MLD , SMT Power Inductors - DO3316P Series
DO3316P-683MLD , SMT Power Inductors - DO3316P Series
DO3340P-104 , SMT Power Inductors - DO3340P
DO3340P-104 , SMT Power Inductors - DO3340P
DF01S-DF02S-DF04M-DF04STR16-DF10M
50V Bridge in a D-71 package
International
Tiait, Rectifier
Bulletin U2788 rev.G 04/03
DF SERIES
1A Single Phase DIL. Rectifier Bridge
Features
. Glass passivated chips
. Leads on standard 0.1" grid
. Suitable for automatic insertion
. High surge current capability
. Fully characterised data
.WItie temperature range
. Surface mount option
. Lead free terminals solderable as per
MIL-STD-750 Method 2026
. High temperature soldering guaranteed 260°C/8-10 secs
. Polarity symbols marked on the case
. UL E160375 approved lhl
Description
The DF Series of Single Phase Rectifier Bridges
consists of four silicon junctions encapsulated in a 4
pin DIL. package. These devices are intended for
general use in industrial and consumer equipment.
Electrical Specification
|O(av)
DF... Units Conditions
IO Maximum DC output 1.0 A Tamb = 40°C, Resistive or inductive load
current 0.8 A Tamb = 40°C, Capacitive load
|FSM Maximum peak one 30 A t = 10ms, 20ms Following any rated
cycle, non-repetitive 31 A t = 8.3ms, 16.7ms load condition and with
surge current rated VRRM reapplied
Pt Maximum Pt capability 4.5 A25 t = 10ms Initial T J = T J max
for fusing 4.1 A23 t = 8.3ms 100% VRRM reapplied
6.4 A25 t = 10ms Initial T J = T J max
5.8 A25 t = 8.3ms no voltage reapplied
I2\/t Maximum I21! 64 A215 t= 0.1 to 10ms, no voltage reapplied
capability for fusing
VFM Maximum peak forward 1.0 V IFS, = 1.0A, T, = 25°C
voltage per diode
IRM Typical peak reverse 5 pA T J = 25°C, 100% VRRM
leakage per diode 100 pA T., = 150°C, 100% VRRM
f Operating frequency 50 to 1000 Hz
VRRM Maximum repetitive peak 50 to 1000 V
reverse voltage range
Thermal and Mechanical Specifications
DF... Units Conditions
T, Operating and storage - 55 to 150 (
Tstg temperature range
RmJA Thermal resistance, 60 K/W
junctions to ambient
W Approximate weight 0.6 (0.02) g (oz)
1
DF SERIES
Bulletin U2788 rev.G 04103
International
IEER Rectifier
Voltage Specifications
Instantaneous Forward Current (A)
Average Output Current (A)
Part Number VRRM. Maximum repetitive VRSM. Maximum non-
peak reverse repetitive peak
voltage reverse voltage
DF005M/DF005S 50 80
DFO1M/DF01S 100 150
DF02MIDF02S 200 300
DF04M/DF04S 400 500
DF06M/DF06S 600 700
DF08M/DF08S 800 900
DF10M/DF10S 1000 1100
Junction
T] = 1500
0.8 1.2 1.6 2.0
Instantaneous Forward Voltage (V)
Fig. 1 - Forward Characteristics
00 20 40 60 80 100120 140 160
Maximum Allowable Ambient Temperature (°C)
Fig. 3 - Current Ratings
Maximum Total Power Loss (W)
Maximum Peak Surge Current (A)
0.2 0.4 0.6 0.8 1.0
Average Output Current (A)
Fig. 2 - Power Loss Characteristics
26 50Hz
omamooa
10 -2 10 _ 1 1 10
Pulse Train Duration (s)
Fig. 4 - Non-Repetititive Surge Ratings
