DB3TG ,Bi-Directional Trigger DiodesFEATURESn V : 32VBOn Low breakover current: 15μA maxn Breakover voltage range: 30 to 34VDESCRIPTION ..
DB3TG ,Bi-Directional Trigger DiodesFEATURESn V : 32VBOn Low breakover current: 15μA maxn Breakover voltage range: 30 to 34VDESCRIPTION ..
DB3TG ,Bi-Directional Trigger DiodesABSOLUTE MAXIMUM RATINGS (limiting values)Symbol Parameter Value UnitI Repetitive peak on-state cur ..
DB3-TG ,Bi-Directional Trigger DiodesDB3TG®DIAC
DB4 ,SILICON BIDIRECTIONAL DIACFEATURESn V : 32V and 40VBOn LOW BREAKOVER CURRENTDO-35DESCRIPTION (DB3 and DB4)Functioning as a tr ..
DBB08C ,Single-Phase Bridge Rectifying Diodes
DM74LS00 ,Quad 2-Input NAND GateFeaturesYAlternate Military/Aerospace device (54LS00) is avail-This device contains four independen ..
DM74LS00J ,Quad 2-Input NAND GatesFeaturesYAlternate Military/Aerospace device (54LS00) is avail-This device contains four independen ..
DM74LS00M ,Quad 2-Input NAND GatesGeneral DescriptionThis device contains four independent gates each of whichperforms the logic NAND ..
DM74LS00N ,Quad 2-Input NAND GateGeneral DescriptionThis device contains four independent gates each of whichperforms the logic NAND ..
DM74LS00SJ ,Quad 2-Input NAND GateGeneral DescriptionThis device contains four independent gates each of whichperforms the logic NAND ..
DM74LS02M ,Quad 2-Input NOR GateFeaturesYAlternate Military/Aerospace device (54LS02) is avail-This device contains four independen ..
DB3TG-DB3-TG
Bi-Directional Trigger Diodes
1/4
DB3TGDIAC VBO: 32V Low breakover current: 15μA max Breakover voltage range:30to 34V
FEATURESFunctioningasa trigger diode witha fixed voltage
reference, the DB3TG canbe usedin conjunction
with triacs for simplified gate control circuitsoras starting elementin fluorescent lamp ballasts.
DESCRIPTION
ABSOLUTE MAXIMUM RATINGS (limiting values)
DB3TG Applicableto both forwardand reverse directions.
**Connectedin parallel tothe device.
ELECTRICAL CHARACTERISTICS(Tj= 25°C unless otherwise specified)
ORDERING INFORMATION
OTHER INFORMATION
DB3TG
Diagram1: Voltage- current characteristic curve.
Diagram2: Test circuit.
Diagram3: Rise time measurement. 50 75 100 125
VBO [Tj]
VBO [Tj = 25°C]
Fig.1: Relative variationof VBO versus junction
temperature (typical values) 10 1000.1
ITRM(A)
Fig.2: Repetitive peak pulse current versus pulse
duration (maximum values).
DB3TG
PACKAGE MECHANICAL DATA(in millimeters)
DO-35
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tp(μs)
Fig.3: Time duration while current pulseis higher
50mA versusC andRs (typical values).
:
www.ic-phoenix.com
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