SMDB3 ,DIACDB3 DB4 SMDB3®DIAC
SMDH160 , PolySwitch Resettable Devices Surface-mount Devices
SMDJ100A , SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE-5.0 TO 170 Volts 3000 Watt Peak Pulse Power
SMDJ100A , SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE-5.0 TO 170 Volts 3000 Watt Peak Pulse Power
SMDJ100CA , SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR
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SN74AHC1G32DCK , SINGLE 2-INPUT POSITIVE-OR GATE
SN74AHC1G32DCKR ,Single 2-Input Positive-OR GateTable of Contents8.2 Functional
SN74AHC1G32DCKRG4 ,Single 2-Input Positive-OR Gate 5-SC70 -40 to 125Electrical Characteristics table. .. 5• Added –55°C to 125°C to both Switching Characteristics tabl ..
SN74AHC1G32DCKT ,Single 2-Input Positive-OR GateMaximum Ratings(1)over operating free-air temperature range (unless otherwise noted)MIN MAX UNITV S ..
SN74AHC1G32DRLR ,Single 2-Input Positive-OR Gate 5-SOT -40 to 125Maximum Ratings(1)over operating free-air temperature range (unless otherwise noted)MIN MAX UNITV S ..
SN74AHC1G32HDCK3 ,Single 2-Input Positive-OR Gate 5-SC70 -40 to 85Features... 18.3 Feature Description...... 82 Applications..... 18.4 Device Functional Modes...... ..
DB3-DB4-SMDB3
SILICON BIDIRECTIONAL DIAC
1/5
DB3 DB4 SMDB3DIAC VBO: 32V and 40V LOW BREAKOVER CURRENT
FEATURESFunctioningasa trigger diode witha fixed voltage
reference, the DB3/DB4 series can be usedin
conjunction with triacs for simplified gate control
circuitsor asa starting elementin fluorenscent
lamp ballasts. new surface mount versionis now availablein
SOT-23 package, providing reduced space and
compatibility with automatic pick and place
equipment.
DESCRIPTION
ABSOLUTE MAXIMUM RATINGS (limiting values)
Note:* SMDB3 indicatedas Preliminary specas productisstill indevelopment stage.
DB3 DB4 SMDB3 Applicableto both forwardand reverse directions.
**Connectedin parallel tothe device.
ELECTRICAL CHARACTERISTICS(Tj= 25°C unless otherwise specified)
PRODUCT SELECTOR
ORDERING INFORMATION
DB3 DB4 SMDB3
Diagram1: Voltage- current characteristic curve.
Diagram2: Test circuit.
Diagram3: Rise time measurement.
OTHER INFORMATION
DB3 DB4 SMDB3 20 50 100 200 5000
tp(μs)
Fig.3: Time duration while current pulseis higher
50mA versusC and Rs (typical values).
PACKAGE MECHANICAL DATA(in millimeters)
DO-35 50 75 100 1250.80
VBO [Tj] /VBO [Tj=25°C]
Fig.1: Relative variationof VBO versus junction
temperature (typical values). 10 1000.1
ITRM(A)
Fig.2: Repetitive peak pulse current versus pulse
duration (maximum values).
DB3 DB4 SMDB3Information furnishedis believedtobe accurateandreliable. However,STMicroelectronicsassumesno responsibilityforthe consequencesof
useof suchinformation norfor anyinfringementof patents orother rightsof third parties whichmayresult fromits use.Nolicenseisgrantedby
implicationor otherwise underany patentor patent rightsof STMicroelectronics. Specifications mentionedinthis publicationare subjectto
change without notice. This publication supersedesand replacesall information previously supplied.
STMicroelectronics productsarenot authorizedforuseas critical componentsinlife support devicesor systems without express writtenap-
provalof STMicroelectronics.
TheST logoisa registered trademarkof STMicroelectronics 2001 STMicroelectronics- Printedin Italy-All rights reserved.
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http://
PACKAGE MECHANICAL DATA (in millimeters)
SOT-23
FOOTPRINT
:
www.ic-phoenix.com
.
