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DAP222T1GONN/a5000avaiCommon Anode Silicon Dual Switching Diodes


DAP222T1G ,Common Anode Silicon Dual Switching DiodesTHERMAL CHARACTERISTICS2 NBRating Symbol Max UnitSC−70Power Dissipation P 150 mWDCASE 419Junction T ..
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DAP222T1G
Common Anode Silicon Dual Switching Diodes
DAP222, DAP202U
Preferred Device

Common Anode Silicon
Dual Switching Diodes
These Common Anode Silicon Epitaxial Planar Dual Diodes are
designed for use in ultra high speed switching applications. The
DAP222 device is housed in the SC−75/SOT−416 package which is
designed for low power surface mount applications, where board
space is at a premium. The DAP202U device is housed in the
SC−70/SOT−323 package.
Features
Fast trr Low CD Available in 8 mm Tape and Reel Pb−Free Package is Available
MAXIMUM RATINGS (TA = 25°C)

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
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Preferred devices are recommended choices for future use
ORDERING INFORMATION
SC−75
CASE 463
STYLE 3
MARKING
DIAGRAMS
1
SC−70
CASE 419

†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
ANODE
CATHODE
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