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Partno	Mfg	Dc	Qty	Available	Descript
DA108S	ST8	N/a	2463	avai	DIODE ARRAY
DA112S	ST	N/a	37	avai	DIODE ARRAY

DA108S ,DIODE ARRAYFEATURESARRAYOF 8 OR12DIODESLOW INPUT CAPACITANCE I/O 1 1 8 REF 1SUITABLEFOR DIGITAL LINE PROTECTIO ..
DA108S1 ,DIODE ARRAYABSOLUTE MAXIMUM RATINGS (T = 25°C)ambSymbol Parameter Value UnitV Repetitive peak reverse voltage ..
DA108S1RL ,DIODE ARRAYDA108S1DA112S1®Application Specific DiscretesTMDIODE ARRAYA.S.D.APPLICATIONProtection of logic side ..
DA112S ,DIODE ARRAYABSOLUTE MAXIMUM RATINGS (T =25°C)ambSymbol Parameter Value UnitV Repetitivepeakreverse voltage(for ..
DA112S1 ,DIODE ARRAYFEATURESn ARRAY OF 8 OR 12 DIODESSO-8n LOW INPUT CAPACITANCEn SUITABLE FOR DIGITAL LINE PROTECTIONF ..
DA121 , Ultra high-speed switching diode arrays
DI101 , DUAL-IN-LINE GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 1.0~1.5 Amperes)
DI1010S , SURFACE MOUNT GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER
DI104 , DUAL-IN-LINE GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 1.0~1.5 Amperes)
DI104 , DUAL-IN-LINE GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 1.0~1.5 Amperes)
DI104 , DUAL-IN-LINE GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 1.0~1.5 Amperes)
DI104S , SURFACE MOUNT GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER

DA108S-DA112S
DIODE ARRAY
DA108S1
DA112S1
SO8
ARRAYOF8 OR12 DIODES
LOW INPUT CAPACITANCE
SUITABLEFOR DIGITAL LINE PROTECTION
FEATURES
ARRAYof8or12 diodes configuredby cellsof2
diodes, eachcell being usedto protect signalline
from transient overvoltagesby clamping action.
DESCRIPTION
FUNCTIONAL DIAGRAM: DA108S1
March 1998- Ed:4
DIODE ARRAY
I/O1
I/O2
I/O3
I/O4 I/O5
REF2
I/O6
REF1
Application Specific Discretes
A.S.D.TM
FUNCTIONAL DIAGRAM: DA112S1
I/O1
I/O2
I/O3
I/O4
REF2
REF1
REF2
REF1
Protectionof logic sideof ISDN S-interface.
ProtectionofI/O linesof microcontroller.
Signal conditioning.
APPLICATION
IEC1000-4-22level4: 15kV(air discharge)
8kV(contact discharge)
COMPLIESWITH FOLLOWING STANDARDS:
1/5
Symbol Parameter Value Unit
VRRM Repetitivepeakreversevoltage(foronesinglediode) 18 V
IPP Repetitive peak forwardcurrent* 8/20 μs12 A Power dissipation 0.73 W
Tstg
Storagetemperature range
Maximum operating junction temperature55to+ 150
150 °C Maximumlead temperaturefor soldering during 10s. 260 °CThe surgeis repeated afterthe devicereturnsto ambienttemperature
ABSOLUTE MAXIMUM RATINGS (Tamb =25°C)
Symbol Parameter Value Unit
Rth(j-a) Junctionto ambient 170 °C/W
THERMAL RESISTANCES
Symbol Parameter Max. Unit
VFP Peak forward voltage IPP= 12A, 8/20μs DA108S1
DA112S1 Forward voltage IF=50mA 1.2 V Reverse leakage current VR= 15V 2 μA
ELECTRICAL CHARACTERISTICS (Tamb =25°C)
DA108S1/ DA112S1
2/5
Fig.2: Typical peak forward voltagecharacteristics (8/20μs pulse)
VF(V)
0.001 0.01 0.1 10.0
2.0=25Co
IF(A)
Typical values VF(V)
110 200.0
Typical values
IF(A)=25Co
Fig.1: Input capacitance 4 6 8 10 12 14 160 (pF)
I/OCC
REF2
REF1 bias (V) =5VCC =15VCC
Typical values connected between REF1and REF2
Input applied: bias+950mV at1 MHZ
(RMS)
DA108S1/ DA112S1
3/5
APPLICATION1: ISDN Interface Protection
Residual lightningsurgesat transformer secondaryare suppressedby DA108S1
APPLICATION2: MicrocontrollerI/O port protection
DA1x S1x
4-6bit input port
VccVcc
Vcc
Vcc
Vcc
I/O
I/O
I/O
I/O
IMPORTANT: DA108S1must imperativelybe connectedtothe reference voltagesby REF1 and REF2.
DA108S1/ DA112S1
4/5
PACKAGE MECHANICAL DATA
SO8(Plastic)
Information furnishedis believedtobe accurateand reliable. However, SGS-THOMSON Microelectronics assumesno responsibilityforthe
consequencesofuseofsuch informationnorforany infringementof patentsor other rightsofthird parties which mayresultfrom itsuse.No
licenseis grantedby implicationor otherwise underany patentor patentrights ofSGS-THOMSONMicroelectronics.Specifications mentionedthis publication aresubjectto changewithout notice.This publication supersedes andreplacesall informationpreviously supplied.
SGS-THOMSONMicroelectronics productsare notauthorizedforuse ascritical componentsinlife supportdevicesor systems withoutexpress
writtenapprovalof SGS-THOMSONMicroelectronics. 1998 SGS-THOMSON Microelectronics- Printed inItaly-All rights reserved.
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REF.
DIMENSIONS
Millimetres Inches
Min. Typ. Max. Min. Typ. Max. 1.75 0.069 0.1 0.25 0.004 0.010 1.65 0.065 0.35 0.48 0.014 0.019 0.19 0.25 0.007 0.010 0.50 0.020 45°(typ) 4.8 5.0 0.189 0.197 5.8 6.2 0.228 0.244 1.27 0.050 3.81 0.150 3.8 4.0 0.15 0.157 0.4 1.27 0.016 0.050 0.6 0.024
S8° (max)
Packaging: Preferencepackagingis tapeand reel.
DA108S1 DA108S
DA112S1 DA112S
MARKING: Logo, Data Code,
ORDER CODE
Package: SO8 plastic
Diode ARRAY
Numberof diodes
Serial
DA1 08 S1 RL: Tapeand reel tubes
DA108S1/ DA112S1
5/5
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