D45H2A ,PNP Power AmplifierD45H2AD45H2APNP Power Amplifier• This device is designed for power amplifier, regulator and switchi ..
D45H2A. ,PNP Power AmplifierD45H2AD45H2APNP Power Amplifier• This device is designed for power amplifier, regulator and switchi ..
D45H5 ,COMPLEMENTARY SILICON POWER TRANSISTORSD45H5D45H8 \ D45H11®PNP SILICON POWER TRANSISTORS■ STMicroelectronics PREFERREDSALESTYPES ■ LOW COL ..
D45H8 ,COMPLEMENTARY SILICON POWER TRANSISTORSD45H5D45H8 \ D45H11®PNP SILICON POWER TRANSISTORS■ STMicroelectronics PREFERREDSALESTYPES ■ LOW COL ..
D45VH10 ,Trans GP BJT PNP 80V 15A 3-Pin(3+Tab) TO-220AB RailTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction to Case R 1.5 C/ ..
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DDZ16-7 , SURFACE MOUNT PRECISION ZENER DIODE
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D45H2A-D45H2A.
PNP Power Amplifier
D45H2A D45H2A PNP Power Amplifier • This device is designed for power amplifier, regulator and switching circuits where speed is important. • Sourced from process 5Q. TO-220 1 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Emitter Voltage 30 V CEO I Collector Current - Continuous 8.0 A C T , T Operating and Storage Junction Temperature Range - 55 ~ 150 °C J STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristics V Collector-Emitter Breakdown Voltage I = 100mA, IB = 0 30 V (BR)CEO C I Collector Cut-off Current V = 60V, IE = 0 10 μA CBO CB I Emitter Cut-off Current V = 5V, IC = 0 100 μA EBO EB On Characteristics h DC Current Gain V = 5V, I = 8A 100 FE CE C V = 5V, I = 10A 80 CE C V = 5V, I = 12A 65 CE C V (sat) Collector-Emitter Saturation Voltage I = 8A, I = 0.4A 1 V CE C B V (sat) Base-Emitter Saturation Voltage I = 8A, I = 0.8A 1.5 V BE C B Small Signal Characteristics f Current Gain Bandwidth Product V = 10V, I = 500mA 25 MHz T CE C Thermal Characteristics T =25°C unless otherwise noted A Symbol Parameter Max. Units P Total Device Dissipation 60 W D Derate above 25°C 480 mW/°C R Thermal Resistance, Junction to Case 2.1 °C/W θJC R Thermal Resistance, Junction to Ambient 62.5 °C/W θJA ©2002 Rev. A, February 2002
