D44H11 ,COMPLEMENTARY SILICON POWER TRANSISTORSTHERMAL CHARACTERISTICSD45H8 TO−220 50 Units/RailCharacteristic Symbol Max UnitÎD45H8G TO−220 50 Un ..
D44H11 ,COMPLEMENTARY SILICON POWER TRANSISTORSAPPLICATIONS ■ GENERAL PURPOSE SWITCHING ■ GENER ..
D44H11 ,COMPLEMENTARY SILICON POWER TRANSISTORS
D44H11 ,COMPLEMENTARY SILICON POWER TRANSISTORSELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)CÎCharacteristic Symbol Min Typ Max Uni ..
D44H11 ,COMPLEMENTARY SILICON POWER TRANSISTORS
D44H-11 ,COMPLEMENTARY SILICON POWER TRANSISTORS
DDTB122LC-7-F , PNP PRE-BIASED 500 mA SOT-23 SURFACE MOUNT TRANSISTOR
DDTC113TE-7-F , NPN PRE-BIASED SMALL SIGNAL SOT-523 SURFACE MOUNT TRANSISTOR
DDTC113ZE-7-F , NPN PRE-BIASED SMALL SIGNAL SOT-523 SURFACE MOUNT TRANSISTOR
DDTC114ECA-7 , NPN PRE-BIASED SMALL SIGNAL SOT-23 SURFACE MOUNT TRANSISTOR
DDTC114EKA-7-F , NPN PRE-BIASED SMALL SIGNAL SC-59 SURFACE MOUNT TRANSISTOR
DDTC114TE-7-F , NPN PRE-BIASED SMALL SIGNAL SOT-523 SURFACE MOUNT TRANSISTOR
D44H11-D45H11
COMPLEMENTARY SILICON POWER TRANSISTORS
D44H Series (NPN), D45H
Series (PNP)
Preferred DevicesComplementary Silicon
Power Transistors
These series of plastic, silicon NPN and PNP power transistors can
be used as general purpose power amplification and switching such as
output or driver stages in applications such as switching regulators,
converters and power amplifiers.
Features Pb−Free Package is Available Low Collector−Emitter Saturation Voltage
VCE(sat) = 1.0 V (Max) @ 8.0 A Fast Switching Speeds Complementary Pairs Simplifies Designs
MAXIMUM RATINGSMaximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
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ÎÎÎ Pulse Width � 6.0 ms, Duty Cycle � 50%.
*For additional information on our Pb−Free strategy and soldering details, please download