CY74FCT841CTQCT ,10-Bit Bus-Interface D-Type Latches with 3-State Outputs CY54FCT841T, CY74FCT841T 10-BIT LATCHESWITH 3-STATE OUTPUTSSCCS035A – SEPTEMBER 1994 – REVISED OCT ..
CY7B1342-25JI , 4K x 8 Dual-Port Static RAMs and 4K x 8 Dual-Port Static RAM with Semaphores
CY7B1342-25JI , 4K x 8 Dual-Port Static RAMs and 4K x 8 Dual-Port Static RAM with Semaphores
CY7B1342-35JC , 4K x 8 Dual-Port Static RAMs and 4K x 8 Dual-Port Static RAM with Semaphores
CY7B135-20JC , 4K x 8 Dual-Port Static RAMs and 4K x 8 Dual-Port Static RAM with Semaphores
CY7B135-20JC , 4K x 8 Dual-Port Static RAMs and 4K x 8 Dual-Port Static RAM with Semaphores
D2212 , METAL GATE RF SILICON FET
D2213 , METAL GATE RF SILICON FET
D2220UK , METAL GATE RF SILICON FET
D2300 , 1.3 mm D2300-Type Laser Isolated DFB Laser Module
D240505ND-1W , TWIN OUTPUT DC-DC CONVERTER
D240505NS-1W , TWIN OUTPUT DC-DC CONVERTER
CY74FCT841CTQCT
10-Bit Bus-Interface D-Type Latches with 3-State Outputs
Significantly Improved Noise
Characteristics Ioff Supports Partial-Power-Down Mode
Operation Matched Rise and Fall Times ESD Protection Exceeds JESD 22
– 2000-V Human-Body Model (A114-A)
– 200-V Machine Model (A115-A)
– 1000-V Charged-Device Model (C101) Fully Compatible With TTL Input and
Output Logic Levels High-Speed Parallel Latches Buffered Common Latch-Enable Input 3-State Outputs CY54FCT841T
– 32-mA Output Sink Current
– 12-mA Output Source Current CY74FCT841T
– 64-mA Output Sink Current
– 32-mA Output Source Current
descriptionThe ’FCT841T bus-interface latches are designed to eliminate additional packages required to buffer existing
latches and provide additional data width for wider address/data paths or buses carrying parity. The ’FCT841T
devices are buffered 10-bit-wide versions of the FCT373 function.
The ’FCT841T devices’ high-performance interface is designed for high-capacitance-load drive capability, while
providing low-capacitance bus loading at both inputs and outputs. Outputs are designed for low-capacitance
bus loading in the high-impedance state.
These devices are fully specified for partial-power-down applications using Ioff . The Ioff circuitry disables the
outputs, preventing damaging current backflow through the device when it is powered down.
PIN DESCRIPTIONPlease be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.36
GND36