CUS551V30 ,Small-signal Schottky barrier diodeElectrical Characteristics (Unless otherwise specified, T = 25 = 25 = 25 = 25) ) ) )a a a aChar ..
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CUS551V30
Small-signal Schottky barrier diode
CUS551V30
Schottky Barrier Diode Silicon Epitaxial
CUS551V30CUS551V30CUS551V30CUS551V30
1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications High-Speed Switching
2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures
(1) Low forward voltage: VF(3) = 0.38 V (typ.)
(2) General-purpose USC package, equivalent to SOD-323 and SC-76 packages.
3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit
4. 4. 4. 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, Taaa a = 25 = 25 = 25 = 25))))
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on a glass-epoxy circuit board of 20 mm × 20 mm, pad dimensions of 4 mm × 4 mm
Note 2: Measured with a 10 ms pulse.
