CSD17510Q5A ,30V N-Channel Low Side NexFET Power MOSFET with 20 Volt VgsMAXIMUM RATINGSApplicationsT = 25°C unless otherwise stated VALUE UNITAV Drain to Source Voltage 30 ..
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CSD17510Q5A
30V N-Channel Low Side NexFET Power MOSFET with 20 Volt Vgs
CSD17510Q5A www.ti.com SLPS271G –JULY 2010–REVISED SEPTEMBER 2012 30V, N-Channel NexFET™ Power MOSFETs Check for Samples: CSD17510Q5A PRODUCT SUMMARY 1FEATURES V Drain to Source Voltage 30 V DS 2• Ultralow Q and Q g gd Q Gate Charge Total (4.5V) 6.4 nC g • Low Thermal Resistance Q Gate Charge Gate to Drain 1.9 nC gd • Avalanche Rated V = 4.5V 5.4 mΩ GS R Drain to Source On Resistance DS(on) • Pb Free Terminal Plating V = 10V 4.1 mΩ GS V Threshold Voltage 1.5 V GS(th) • RoHS Compliant • Halogen Free Text Added For Spacing • SON 5-mm × 6-mm Plastic Package ORDERING INFORMATION Device Package Media Qty Ship APPLICATIONS SON 5-mm × 6-mm 13-Inch Tape and CSD17510Q5A 2500 Plastic Package Reel Reel • Point-of-Load Synchronous Buck in Networking, Telecom, and Computing Systems Text Added For Spacing • Optimized for Control and Synchronous FET ABSOLUTE MAXIMUM RATINGS Applications T = 25°C unless otherwise stated VALUE UNIT A V Drain to Source Voltage 30 V DS DESCRIPTION V Gate to Source Voltage ±20 V GS The NexFET™ power MOSFET has been designed Continuous Drain Current, T = 25°C 55 A C to minimize losses in power conversion applications. I D (1) Continuous Drain Current 20 A (2) I Pulsed Drain Current, T = 25°C 129 A DM A Top View (1) P Power Dissipation 3 W D S 1 8 D T , Operating Junction and Storage J –55 to 150 °C T Temperature Range STG Avalanche Energy, single pulse S 2 7 D E 146 mJ AS I = 54A, L = 0.1mH, R = 25Ω D G 2 2 (1) Typical R = 41°C/W on 1-inch (6.45-cm ), 2-oz. (0.071- S 3 6 D θJA mm thick) Cu pad on a 0.06-inch (1.52-mm) thick FR4 PCB. D (2) Pulse duration≤300μs, duty cycle≤2% G 5 4 D P0093-01 Text 4 Spacing Text 4 Spacing R vs V GATE CHARGE DS(on) GS 30 20 I = 20A I = 20A D D 18 18 V = 15V DS 25 16 14 14 20 12 15 10 10 T = 125°C C T = 25°C 8 C 10 6 6 4 5 2 2 0 0 0 2 4 6 8 10 12 14 16 18 20 0 5 10 15 20 25 V - Gate-to-Source Voltage - V Q - Gate Charge - nC GS g G006 G003 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. 2NexFET is a trademark of Texas Instruments. PRODUCTION DATA information is current as of publication date. Copyright © 2010–2012, Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. R - On-State Resistance - mΩ DS(on) V - Gate-to-Source Voltage - V GS
