CSD17507Q5A ,30V N-Channel High Side NexFET Power MOSFET with 20 Volt VgsMaximum Ratingslosses in power conversion applications.T = 25°C (unless otherwise stated) VALUE UNI ..
CSD17510Q5A ,30V N-Channel Low Side NexFET Power MOSFET with 20 Volt VgsMAXIMUM RATINGSApplicationsT = 25°C unless otherwise stated VALUE UNITAV Drain to Source Voltage 30 ..
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CSD17507Q5A
30V N-Channel High Side NexFET Power MOSFET with 20 Volt Vgs
Support & Product Order Tools & Technical Community Folder Now Documents Software CSD17507Q5A SLPS243G – JULY 2010 – REVISED JANUARY 2017 CSD17507Q5A 30-V N-Channel NexFET™ Power MOSFET 1 Features Product Summary 1• Ultra-Low Q and Q g gd T = 25°C TYPICAL VALUE UNIT A • Low-Thermal Resistance V Drain-to-Source Voltage 30 V DS • Avalanche Rated Q Gate Charge Total (4.5 V) 2.8 nC g • Lead-Free Terminal Plating Q Gate Charge Gate-to-Drain 0.7 nC gd V = 4.5 V 11.8 GS • RoHS Compliant R Drain-to-Source On Resistance mΩ DS(on) V = 10 V 9 GS • Halogen Free V Threshold Voltage 1.6 V GS(th) • SON 5-mm × 6-mm Plastic Package . 2 Applications (1) Device Information • Point-of-Load Synchronous Buck in Networking, DEVICE MEDIA QTY PACKAGE SHIP Telecom and Computing Systems CSD17507Q5A 13-Inch Reel 2500 SON Tape • Optimized for Control FET Applications 5.00-mm × 6.00-mm and CSD17507Q5AT 7-Inch Reel 250 Plastic Package Reel 3 Description (1) For all available packages, see the orderable addendum at the end of the data sheet. This 30-V, 9-mΩ, SON 5-mm × 6-mm NexFET™ power MOSFET has been designed to minimize Absolute Maximum Ratings losses in power conversion applications. T = 25°C (unless otherwise stated) VALUE UNIT A Top View V Drain-to-Source Voltage 30 V DS V Gate-to-Source Voltage ±20 V GS S 1 8 D Continuous Drain Current 65 Continuous Drain Current (Silicon Limited), I 61 A D S 2 7 D T = 25°C C (1) Continuous Drain Current 14 S 3 6 D (2) I Pulsed Drain Current, T = 25°C 163 A DM C (1) Power Dissipation 3.1 D P W G 5 4 D D Power Dissipation, T = 25°C 39 C P0093-01 T , Operating Junction, J –55 to 150 °C T Storage Temperature STG . Avalanche Energy, Single Pulse E 45 mJ AS I = 30 A, L = 0.1 mH, R = 25Ω D G . 2 (1) Typical R = 40°C/W on a 1-in , 2-oz Cu pad on a θJA 0.06-in thick FR4 PCB. (2) Max R = 2°C/W, pulse duration≤ 100μs, duty cycle≤ 1%. θJC R vs V Gate Charge DS(on) GS 30 10 I = 11 A T = 25qC, I = 11 A C D D 9 V = 15 V T = 125qC, I = 11 A C D DS 25 8 7 20 6 15 5 4 10 3 2 5 1 0 0 0 2 4 6 8 10 12 14 16 18 20 0 1 2 3 4 5 6 V - Gate-to-Source Voltage (V) Q - Gate Charge (nC) GS g D007 D004 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. R - On-State Resistance (m:) DS(on) V - Gate-to-Source Voltage (V) GS
