CSD17310Q5A ,30V N Channel NexFET?Power MOSFETMAXIMUM RATINGS• Optimized for Synchronous FET ApplicationsT = 25°C unless otherwise stated VALUE U ..
CSD17313Q2 ,30V N Channel NexFET?Power MOSFETMaximum Ratingsgate drive applications. The 2-mm × 2-mm SONT = 25°C VALUE UNITAoffers excellent the ..
CSD17507Q5A ,30V N-Channel High Side NexFET Power MOSFET with 20 Volt VgsMaximum Ratingslosses in power conversion applications.T = 25°C (unless otherwise stated) VALUE UNI ..
CSD17510Q5A ,30V N-Channel Low Side NexFET Power MOSFET with 20 Volt VgsMAXIMUM RATINGSApplicationsT = 25°C unless otherwise stated VALUE UNITAV Drain to Source Voltage 30 ..
CSD-322G , 0.3 Inch Dual Digits Display
CSD86350Q5D ,Synchronous Buck NexFET? Power Block MOSFET Pair 8-LSON-CLIP -55 to 150Features 3 DescriptionThe CSD86350Q5D NexFET™ power block is an1• Half-Bridge Power Blockoptimized ..
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CSD17310Q5A
30V N Channel NexFET?Power MOSFET
CSD17310Q5A www.ti.com SLPS255A –FEBRUARY 2010–REVISED JULY 2010 30V, N-Channel NexFET™ Power MOSFETs Check for Samples: CSD17310Q5A 1 FEATURES PRODUCT SUMMARY 2• Optimized for 5V Gate Drive V Drain to Source Voltage 30 V DS • Ultralow Q and Q g gd Q Gate Charge Total (4.5V) 8.9 nC g • Low Thermal Resistance Q Gate Charge Gate to Drain 2.1 nC gd • Avalanche Rated V = 3V 5.7 mΩ GS R Drain to Source On Resistance V = 4.5V 4.5 mΩ • Pb Free Terminal Plating DS(on) GS V = 8V 3.9 mΩ GS • RoHS Compliant V Threshold Voltage 1.3 V GS(th) • Halogen Free • SON 5-mm × 6-mm Plastic Package ORDERING INFORMATION Device Package Media Qty Ship APPLICATIONS SON 5-mm × 6-mm 13-Inch Tape and CSD17310Q5A 2500 • Notebook Point of Load Plastic Package Reel Reel • Point-of-Load Synchronous Buck in Networking, Telecom and Computing Systems ABSOLUTE MAXIMUM RATINGS • Optimized for Synchronous FET Applications T = 25°C unless otherwise stated VALUE UNIT A V Drain to Source Voltage 30 V DS DESCRIPTION V Gate to Source Voltage +10 / –8 V GS Continuous Drain Current, T = 25°C 100 A C The NexFET™ power MOSFET has been designed I D (1) Continuous Drain Current 21 A to minimize losses in power conversion applications, (2) I Pulsed Drain Current, T = 25°C 134 A and optimized for 5V gate drive applications. DM A (1) P Power Dissipation 3.1 W D Top View T , Operating Junction and Storage J –55 to 150 °C T Temperature Range STG Avalanche Energy, single pulse S 1 8 D E 168 mJ AS I = 58A, L = 0.1mH, R = 25Ω D G 2 2 S 2 7 D (1) R = 40°C/W on 1-inch (6.45-cm ), 2-oz. (0.071-mm thick) qJA Cu pad on a 0.06-inch (1.52-mm) thick FR4 PCB. (2) Pulse duration≤300ms, duty cycle≤2% S 3 6 D D G 5 4 D P0093-01 Text 4 Spacing Text 4 Spacing R vs V GATE CHARGE DS(on) GS 16 8 I = 20A D I = 20A D 14 7 V = 15V DS 12 6 10 5 T = 125°C C 8 4 6 3 4 2 T = 25°C C 2 1 0 0 0 1 2 3 4 5 6 7 8 9 10 0 2 4 6 8 10 12 14 16 V - Gate-to-Source Voltage - V GS Q - Gate Charge - nC g G006 G003 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. 2NexFET is a trademark of Texas Instruments. PRODUCTION DATA information is current as of publication date. Copyright © 2010, Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. R - On-State Resistance - mΩ DS(on) V - Gate-to-Source Voltage - V GS
