CSD17308Q3 ,30V N-Channel NexFET? Power MOSFET 8-VSON-CLIP -55 to 150Electrical Characteristics(T = 25°C unless otherwise stated)APARAMETER TEST CONDITIONS MIN TYP MAX ..
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CSD17308Q3
30V N-Channel NexFET? Power MOSFET 8-VSON-CLIP -55 to 150
Sample & Support & Reference Product Tools & Technical Community Buy Design Folder Documents Software CSD17308Q3 SLPS262B – FEBRUARY 2010 – REVISED OCTOBER 2015 CSD17308Q3 30-V N-Channel NexFET™ Power MOSFETs 1 Features Product Summary 1• Optimized for 5-V Gate Drive T = 25°C VALUE UNIT A • Ultra-Low Q and Q g gd V Drain-to-source voltage 30 V DS • Low Thermal Resistance Q Gate charge total (4.5 V) 3.9 nC g • Avalanche Rated Q Gate charge gate to drain 0.8 nC gd V = 3 V 12.5 mΩ GS • Pb Free Terminal Plating R Drain-to-source on resistance V = 4.5 V 9.4 mΩ DS(on) GS • RoHS Compliant V = 8 V 8.2 mΩ GS • Halogen Free V Threshold voltage 1.3 V GS(th) • VSON 3.3 mm × 3.3 mm Plastic Package (1) Ordering Information 2 Applications DEVICE QTY MEDIA PACKAGE SHIP • Notebook Point of Load 13-Inch SON 3.3 mm × 3.3 mm Tape and CSD17308Q3 2500 Reel Plastic Package Reel • Point-of-Load Synchronous Buck in Networking, (1) For all available packages, see the orderable addendum at Telecom, and Computing Systems the end of the data sheet. 3 Description Absolute Maximum Ratings This 30-V, 8.2-mΩ, 3.3 mm × 3.3 mm VSON T = 25°C unless otherwise stated VALUE UNIT A NexFET™ power MOSFET is designed to minimize V Drain-to-source voltage 30 V DS losses in power conversion applications and V Gate-to-source voltage +10 / –8 V GS optimized for 5-V gate drive applications. Continuous Drain Current (Package 50 Limited) Top View I A D Continuous drain current, T = 25°C 44 C (1) Continuous drain current 14 S 8 D (2) I Pulsed drain current, T = 25°C 167 A DM A (1) S 7 D Power dissipation 2.7 P W D Power Dissipation, T = 25°C 28 C S 6 D T Operating Junction and Storage J, –55 to 150 °C T Temperature Range stg D Avalanche energy, single pulse G 5 D E 65 mJ AS I = 36 A, L = 0.1 mH, R = 25Ω D G P0095-01 2 (1) Typical R = 46°C/W when mounted on a 1 inch (6.45 θJA 2 cm ), 2 oz. (0.071 mm thick) Cu pad on a 0.06 inch (1.52 mm) thick FR4 PCB. (2) Max R = 4.5°C/W, pulse duration≤100μs, duty cycle≤1%. θJC R vs V Gate Charge DS(on) GS 30 8 I = 10 A D V = 15 V 7 DS 25 6 20 5 15 4 3 10 2 5 1 0 0 0 1 2 3 4 5 6 7 8 9 10 0 1 2 3 4 5 6 7 Q - Gate Charge (nC) V - Gate-to-Source Voltage (V) g GS D004 D007 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. R - On-State Resistance (m:) DS(on) V - Gate-to-Source Voltage (V) GS
