CSD17301Q5A ,30V N Channel NexFET?Power MOSFETMAXIMUM RATINGS• Optimized for Synchronous FET ApplicationsT = 25°C unless otherwise stated VALUE U ..
CSD17302Q5A ,30V N Channel NexFET?Power MOSFETMAXIMUM RATINGST = 25°C unless otherwise stated VALUE UNITADESCRIPTIONV Drain to Source Voltage 30 ..
CSD17305Q5A ,30V N Channel NexFET?Power MOSFETMAXIMUM RATINGST = 25°C unless otherwise stated VALUE UNITADESCRIPTIONV Drain to Source Voltage 30 ..
CSD17307Q5A ,30V N Channel NexFET?Power MOSFETMAXIMUM RATINGST = 25°C unless otherwise stated VALUE UNITADESCRIPTIONV Drain to Source Voltage 30 ..
CSD17308Q3 ,30V N-Channel NexFET? Power MOSFET 8-VSON-CLIP -55 to 150Electrical Characteristics(T = 25°C unless otherwise stated)APARAMETER TEST CONDITIONS MIN TYP MAX ..
CSD17310Q5A ,30V N Channel NexFET?Power MOSFETMAXIMUM RATINGS• Optimized for Synchronous FET ApplicationsT = 25°C unless otherwise stated VALUE U ..
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CSD17301Q5A
30V N Channel NexFET?Power MOSFET
CSD17301Q5A www.ti.com SLPS215C –JANUARY 2010–REVISED SEPTEMBER 2010 30V, N-Channel NexFET™ Power MOSFETs Check for Samples: CSD17301Q5A 1 FEATURES PRODUCT SUMMARY 2• Optimized for 5V Gate Drive V Drain to Source Voltage 30 V DS • Ultralow Q and Q g gd Q Gate Charge Total (4.5V) 19 nC g • Low Thermal Resistance Q Gate Charge Gate to Drain 4.3 nC gd • Avalanche Rated V = 3V 2.9 mΩ GS R Drain to Source On Resistance V = 4.5V 2.3 mΩ • Pb Free Terminal Plating DS(on) GS V = 8V 2 mΩ GS • RoHS Compliant V Threshold Voltage 1.1 V GS(th) • Halogen Free • SON 5-mm × 6-mm Plastic Package ORDERING INFORMATION Device Package Media Qty Ship APPLICATIONS SON 5-mm × 6-mm 13-inch Tape and CSD17301Q5A 2500 • Notebook Point of Load Plastic Package reel Reel • Point-of-Load Synchronous Buck in Networking, Telecom and Computing Systems ABSOLUTE MAXIMUM RATINGS • Optimized for Synchronous FET Applications T = 25°C unless otherwise stated VALUE UNIT A V Drain to Source Voltage 30 V DS DESCRIPTION V Gate to Source Voltage +10 / –8 V GS Continuous Drain Current, T = 25°C 100 A C The NexFET™ power MOSFET has been designed I D (1) Continuous Drain Current 28 A to minimize losses in power conversion applications, (2) I Pulsed Drain Current, T = 25°C 181 A and optimized for 5V gate drive applications. DM A (1) P Power Dissipation 3.2 W D Top View T , Operating Junction and Storage J –55 to 150 °C T Temperature Range STG S 1 8 D Avalanche Energy, single pulse E 414 mJ AS I = 91A, L = 0.1mH, R = 25Ω D G S 2 7 D 2 2 (1) Typical R = 39°C/W on 1-inch (6.45-cm ), 2-oz. qJA S 3 6 D (0.071-mm thick) Cu pad on a 0.06-inch (1.52-mm) thick FR4 PCB. D G 4 5 D (2) Pulse duration≤300ms, duty cycle≤2% P0093-01 R vs V GATE CHARGE DS(on) GS 10 8 I = 25A I = 25A D D 9 7 V = 15V DS 8 6 7 5 6 T = 125°C C 5 4 4 3 3 2 2 T = 25°C C 1 1 0 0 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25 30 V - Gate-to-Source Voltage - V Q - Gate Charge - nC GS g G006 G003 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. 2NexFET is a trademark of Texas Instruments. PRODUCTION DATA information is current as of publication date. Copyright © 2010, Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. R - On-State Resistance - mΩ DS(on) V - Gate-to-Source Voltage - V GS
