CSD16412Q5A ,N-Channel NexFET™ Power MOSFET 8-VSONP -55 to 150MAXIMUM RATINGST = 25°C unless otherwise stated VALUE UNITA• Optimized for Control FET Applications ..
CSD16413Q5A ,N-Channel NexFET™ Power MOSFET 8-VSONP -55 to 150ELECTRICAL CHARACTERISTICS(T = 25°C unless otherwise stated)APARAMETER TEST CONDITIONS MIN TYP MAX ..
CSD16413Q5A ,N-Channel NexFET™ Power MOSFET 8-VSONP -55 to 150MAXIMUM RATINGS• Optimized for Control or Synchronous FETT = 25°C unless otherwise stated VALUE UNI ..
CSD17301Q5A ,30V N Channel NexFET?Power MOSFETMAXIMUM RATINGS• Optimized for Synchronous FET ApplicationsT = 25°C unless otherwise stated VALUE U ..
CSD17302Q5A ,30V N Channel NexFET?Power MOSFETMAXIMUM RATINGST = 25°C unless otherwise stated VALUE UNITADESCRIPTIONV Drain to Source Voltage 30 ..
CSD17305Q5A ,30V N Channel NexFET?Power MOSFETMAXIMUM RATINGST = 25°C unless otherwise stated VALUE UNITADESCRIPTIONV Drain to Source Voltage 30 ..
CXD9450-15 , Single-Chip FaxEngine Product Family
CXE-1089Z , 50MHz to 1200MHz 75Ω pHEMT MMIC LNA
CXE-1089Z , 50MHz to 1200MHz 75Ω pHEMT MMIC LNA
CXG1014N , 1.5 GHz Low Noise Amplifier/Down Conversion Mixer
CXG1030N , Power Amplifier for PHS
CXG1045N , GSM900/1800/1900 SPDT TX/RX Switch
CSD16412Q5A
N-Channel NexFET™ Power MOSFET 8-VSONP -55 to 150
CSD16412Q5A www.ti.com SLPS207A–AUGUST 2009–REVISED SEPTEMBER 2010 N-Channel NexFET™ Power MOSFETs Check for Samples: CSD16412Q5A 1FEATURES PRODUCT SUMMARY 2• Ultra Low Qg and Qgd V Drain to Source Voltage 25 V DS • Low Thermal Resistance Q Gate Charge Total (4.5V) 2.9 nC g • Avalanche Rated Q Gate Charge Gate to Drain 0.7 nC gd • Pb Free Terminal Plating V = 4.5V 13 mΩ GS R Drain to Source On Resistance DS(on) V = 10V 9 mΩ GS • RoHS Compliant V Threshold Voltage 2 V GS(th) • Halogen Free • SON 5mm x 6mm Plastic Package ORDERING INFORMATION Device Package Media Qty Ship APPLICATIONS SON 5× 6 Plastic 13-inch Tape and CSD16412Q5A 2500 Package reel Reel • Point-of-Load Synchronous Buck Converter for Applications in Networking, Telecom and Computing Systems ABSOLUTE MAXIMUM RATINGS T = 25°C unless otherwise stated VALUE UNIT A • Optimized for Control FET Applications V Drain to Source Voltage 25 V DS V Gate to Source Voltage +16 /–12 V DESCRIPTION GS Continuous Drain Current, T = 25°C 52 A C The NexFET™ power MOSFET has been designed I D (1) Continuous Drain Current 14 A to minimize losses in power conversion applications. (2) I Pulsed Drain Current, T = 25°C 91 A DM A (1) Top View P Power Dissipation 3 W D T , Operating Junction and Storage J –55 to 150 °C T Temperature Range S 1 8 D STG Avalanche Energy, single pulse E 14 mJ AS I = 17A, L = 0.1mH, R = 25Ω D G S 2 7 D 2 (1) R = 42°C/W on 1in Cu (2 oz) on 0.060" thick FR4 PCB. θJA (2) Pulse width≤300μs, duty cycle≤2% S 3 6 D D G 4 5 D P0093-01 R vs V Gate Charge DS(ON) GS 50 12 WI = 10A I = 10A D D 45 V = 12.5V DS 10 40 35 8 30 T = 125°C C 25 6 20 4 15 10 2 5 T = 25°C C 0 0 0 2 4 6 8 10 12 0 1 2 3 4 5 6 7 V − Gate to Source Voltage − V Q − Gate Charge − nC GS g G006 G003 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. 2NexFET is a trademark of Texas Instruments. PRODUCTION DATA information is current as of publication date. Copyright© 2009–2010, Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. R − On-State Resistance − m DS(on) V − Gate Voltage − V G
